Semiconductor Structure Mask Alignment via Segmented Conductive Paths
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Solution Overview
Problem
Double patterning technology in semiconductor fabrication often results in misalignment between masks, leading to degraded performance or failure of integrated circuits due to coupling capacitance mismatch and signal distortion.
Innovation Solution
A method is developed to generate masks for integrated circuits that involves a flow chart process including layout-versus-schematic analysis, resistance-capacitance extraction, coupling capacitance mismatch analysis, and design rule check, with modifications to layout patterns to reduce misalignment effects, such as assigning conductive paths to different layers and using dummy conductive paths to visualize and correct coupling capacitance variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If double patterning technology is used to achieve finer exposure resolution, then manufacturing precision is improved, but mask misalignment occurs leading to coupling capacitance mismatch
Solution Approach 1:
The patent applies preliminary action by performing layout modifications before mask fabrication. Specifically, conductive paths are segmented and assigned to different masks in advance, and dummy conductive paths are added to compensate for anticipated misalignment. This pre-planning ensures that even when mask misalignment occurs during double patterning, the coupling capacitance mismatch is minimized because the layout was optimized beforehand to account for potential displacement.
2Reliability
If mask misalignment is reduced to minimize coupling capacitance mismatch, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent applies segmentation by dividing conductive paths into multiple segments and assigning different segments to different masks. This segmentation allows the layout to be optimized for minimal coupling capacitance mismatch under various misalignment conditions. By breaking down continuous conductive paths into discrete segments that can be independently positioned on different masks, the method reduces sensitivity to mask misalignment while maintaining manufacturing feasibility through systematic segment assignment rules.
3Reliability
If layout patterns are modified to reduce misalignment effects, then coupling capacitance mismatch is reduced, but design complexity increases
Solution Approach 1:
The patent applies local quality by making targeted modifications only to specific regions of the layout where coupling capacitance mismatch is most critical. Rather than redesigning the entire layout, dummy conductive paths are added locally at strategic positions, and existing conductive paths are segmented only where mask transitions occur. This localized approach minimizes overall layout complexity while effectively addressing the coupling capacitance mismatch problem at critical locations.
Data Source
AI summary
The semiconductor structure includes a first conductive path including first and second segments. The first segment is in a first conductive layer. The second segment is in a second conductive layer. The first and second segments are electrically connected. The semiconductor structure includes a second conductive path including third and fourth segments. The third segment is in the first conductive layer. The fourth segment is in the second conductive layer. The third and fourth segments are electrically connected. The semiconductor structure includes a third conductive path between the first conductive path and the second conductive path, the third conductive path includes fifth and sixth segments. The fifth segment is in the second conductive layer. The sixth segment is in the first conductive layer. The fifth and sixth segments are electrically connected. An area of the first conductive layer between the first and third segments is free of the sixth segment.