Semiconductor Active Region Stabilization via Intersecting Mask Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The active regions in semiconductor structures formed using self-aligned double patterning (SADP) technology are prone to tilt or collapse, leading to structural failure and reduced yield.
Innovation Solution
A method involving the formation of discrete first and second mask layers on a base, where the second mask layers span multiple first mask layers, supporting and fixing them during etching to prevent displacement and collapse, and subsequently forming active regions and word line trenches using these mask layers as masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-aligned double patterning (SADP) technology is used to form active regions, then manufacturing precision is improved, but structural stability deteriorates causing tilt or collapse
Solution Approach 1:
The patent introduces a sacrificial layer as an intermediary between the base and the active regions. This sacrificial layer serves as a temporary support structure during the formation process, preventing the active regions from tilting or collapsing. After the active regions are formed with high precision using SADP technology, the sacrificial layer is removed, having fulfilled its stabilizing function without interfering with the final structure.
Solution Approach 2:
The patent applies beforehand cushioning by forming a support structure (sacrificial layer) prior to creating the active regions. This support structure provides mechanical reinforcement to the base during the critical SADP process, cushioning against forces that would cause tilt or collapse. The support is removed after serving its protective purpose, leaving the precisely formed active regions intact.
2Manufacturing precision
If multiple mask layers are formed and processed, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The patent applies universality by designing the sacrificial layer to serve multiple functions: it acts as a support structure to prevent collapse, serves as a mask during etching processes, and provides a template for forming both active regions and word lines. This multi-functionality reduces the need for separate dedicated structures for each purpose, thereby simplifying the overall device architecture while maintaining high manufacturing precision.
Solution Approach 2:
The patent merges the functions of support structure and patterning mask into a single integrated sacrificial layer system. By combining these functions, the patent reduces the number of separate processing steps and structures needed, thereby reducing device complexity while achieving the desired manufacturing precision for both active regions and word lines.
Data Source
AI summary
The present disclosure provides a method of manufacturing a semiconductor structure, including: providing a base; forming first mask layers and second mask layers on the base, wherein the first mask layers each extend along a first direction, the second mask layers each extend along a second direction, the first direction is different from the second direction, and the first mask layers intersect the second mask layers; cutting off the first mask layers to form first sub-mask layers, wherein the second mask layers each span a plurality of the first sub-mask layers, and partial sidewalls of each of the first sub-mask layers are covered by the second mask layers; etching the base by using a first etching process, to form active regions; forming a isolation structure; and forming word line trench.