Light-Emitting Semiconductor Component with Masked Epitaxial Growth
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Solution Overview
Problem
Existing light-emitting semiconductor components face challenges in precise and cost-effective production, particularly in accurately positioning conversion elements for generating red, green, and blue light, which is crucial for high-resolution display devices, and suffer from heat dissipation issues leading to decreased efficiency and color quality.
Innovation Solution
The production of light-emitting semiconductor components involves epitaxially growing conversion elements on a semiconductor body with an active region, using a mask with precise lithographic openings to align and position conversion elements, and employing a thin matrix material for efficient heat dissipation, allowing for small pixel sizes and improved thermal properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conversion elements are positioned using conventional methods, then production cost is reduced, but positioning precision deteriorates
Solution Approach 1:
The patent applies preliminary action by creating lithographic patterns on the semiconductor body before growing the conversion elements. The lithographic openings are formed in advance to define precise positions, and the conversion elements are subsequently grown only in these predetermined locations through selective epitaxial growth. This preliminary positioning structure ensures high positioning precision while using standard semiconductor fabrication processes that are cost-effective.
2Manufacturing precision
If pixel size is reduced for high-resolution displays, then display resolution is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent applies local quality by using a thin matrix material specifically in the regions between adjacent conversion elements where heat accumulation occurs. This thin matrix material has high thermal conductivity and is strategically placed to create thermal pathways that conduct heat away from the conversion elements. The matrix material thickness is locally optimized - thin enough to provide effective heat dissipation but sufficient to provide electrical isolation. This localized thermal management solution enables small pixel sizes while maintaining adequate heat dissipation capability.
3Reliability
If matrix material thickness is increased for electrical isolation, then insulation performance is improved, but heat dissipation capability deteriorates
Solution Approach 1:
The patent applies parameter changes by precisely controlling the matrix material thickness to be in the range of 1-10 micrometers. This specific thickness parameter range simultaneously achieves both electrical isolation and heat dissipation requirements. The matrix material thickness is optimized as a critical parameter - thick enough to provide sufficient electrical insulation between adjacent conversion elements but thin enough to allow effective thermal conduction. This parameter optimization resolves the contradiction between insulation performance and heat dissipation capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables highly accurate positioning and efficient heat dissipation, resulting in improved color quality, efficiency, and extended lifetime of the semiconductor components, with enhanced thermal management and high contrast ratios for display applications.
Implementation Method 1
The active region is configured for emitting a primary radiation. The primary radiation is for example light from the spectral range from UV radiation to blue light.
Implementation Method 2
the first conversion element is configured for converting part of the primary radiation to a first secondary radiation. That is to say that the conversion element absorbs for example part of the primary radiation and re-emits a first secondary radiation having a lower energy than the primary radiation.
Implementation Method 3
The semiconductor body is produced epitaxially, for example.
Data Source
AI summary
A light-emitting semiconductor component may include a semiconductor body having an active region configured to emit a primary radiation, a first conversion element to convert the primary radiation to a first secondary radiation, a second conversion element to convert the primary radiation to a second secondary radiation, and a mask. The first conversion element and the second conversion element may be arranged at a top side of the semiconductor body, may be configured as bodies that partly cover the semiconductor body, and may be connected to the semiconductor body. The mask may be arranged between the first conversion element, the second conversion element, and the semiconductor body. The mask may have an opening in the region of each conversion element.