Semiconductor Device with Mediator Layer for Etching Endpoint Detection
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Solution Overview
Problem
The existing semiconductor device manufacturing processes face challenges in accurately detecting the etching end point for large substrates, leading to incomplete or excessive etching of magnetic materials, which affects the domain wall movement and magnetization direction changes necessary for information recording and reading.
Innovation Solution
A semiconductor device structure with a third thin film layer between the first and second magnetic layers, allowing for accurate etching end point detection using plasma emission spectrography, ensuring complete removal of the upper magnetic layer without damaging the lower layer, and maintaining magnetic coupling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma etching is used for large substrates, then productivity is improved, but etching end point detection precision deteriorates
Solution Approach 1:
The patent introduces a mediator layer with specific light emitting characteristics that serves as an intermediary between the etching process and detection system. This mediator layer enables accurate end point detection during plasma etching of large substrates by providing distinct optical signals that can be detected even in the plasma environment, thus resolving the contradiction between maintaining high productivity and achieving precise measurement.
2Manufacturing precision
If etching is performed to completely remove the upper magnetic layer, then manufacturing precision is improved, but the lower magnetic layer may be damaged by excessive etching
Solution Approach 1:
The patent implements a feedback mechanism where light emitting characteristics of the mediator layer are monitored during etching. When the upper magnetic layer is completely removed and the etching front reaches the mediator layer, the optical signal changes provide immediate feedback to stop the etching process. This prevents excessive etching that could damage the lower magnetic layer, thus achieving both complete removal of the upper layer and protection of the lower layer.
3Manufacturing precision
If a thin film layer is added between magnetic layers for etching detection, then etching precision is improved, but device complexity increases
Solution Approach 1:
The mediator layer is designed to serve multiple functions simultaneously: it acts as an etching stop layer, provides light emitting characteristics for end point detection, and maintains magnetic coupling between the upper and lower magnetic layers. By consolidating these functions into a single thin film layer, the patent achieves precise etching detection without significantly increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise etching of the semiconductor device, improving manufacturing yield and reducing variations in characteristics and performance by accurately detecting the etching end point and preventing excessive etching, thus enhancing the operational reliability of the device.
Implementation Method 1
detecting, during the etching, by plasma emission spectrography, light emitted from an atom or a molecule in the third thin film layer
Implementation Method 2
a second magnetic layer disposed above the first magnetic layer and magnetically coupled to the first magnetic layer by magnetostatic coupling or exchange coupling
Data Source
AI summary
A semiconductor device includes: a first magnetic layer (1) disposed on a flat substrate surface; a second magnetic layer (3) disposed above the first magnetic layer (1) and magnetically coupled to the first magnetic layer (1) by magnetostatic coupling or exchange coupling; and a third thin film layer (8) formed between the first magnetic layer (1) and the second magnetic layer (3), the third thin film layer (8) having such a thickness as to avoid inhibiting the magnetic coupling between the first magnetic layer (1) and the second magnetic layer (3).