Semiconductor Memory Device Air Gap Stacked Body Integration
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Solution Overview
Problem
Current stacked type semiconductor memory devices face challenges in achieving higher integration while maintaining sufficient breakdown voltage and low parasitic capacitance, which affects operational speed and data retention.
Innovation Solution
The semiconductor memory device incorporates a stacked body with alternating electrode films and air gaps, where the semiconductor pillar pierces the stacked body, and charge storage films are partitioned between the electrode films, along with capping films to enhance integration and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If memory cells are integrated three-dimensionally in a stacked type, then integration density is improved, but breakdown voltage and parasitic capacitance control become more difficult
Solution Approach 1:
The stacked body is segmented into multiple layers with alternating electrode films and air gaps, dividing the continuous structure into discrete functional units. This segmentation allows independent control of electrical properties in each layer while maintaining high integration density through vertical stacking.
Solution Approach 2:
Air gaps are strategically placed at specific locations between electrode films to create localized regions with different dielectric properties. This local quality modification reduces parasitic capacitance in critical areas while maintaining the overall stacked structure for high integration.
2Quantity of substance
If electrode films are stacked closely to increase integration, then device density is improved, but breakdown voltage decreases
Solution Approach 1:
Air gaps are introduced as intermediary structures between adjacent electrode films. These air gaps act as dielectric mediators that electrically isolate the closely-spaced electrode films, preventing direct breakdown while allowing the films to be stacked closely for high integration density.
Solution Approach 2:
The air gaps create localized regions with high dielectric strength between specific electrode films, providing enhanced breakdown voltage protection at critical interfaces while maintaining close spacing elsewhere in the structure to maximize density.
3Reliability
If air gaps are introduced between electrode films, then parasitic capacitance is reduced, but device complexity increases
Solution Approach 1:
The formation of air gaps is merged with the existing stacked body fabrication process. The air gaps are created as part of the layer stacking sequence, combining the gap formation step with the electrode film deposition process to minimize additional manufacturing complexity.
Solution Approach 2:
The manufacturing process is segmented into discrete steps for forming alternating layers of electrode films and air gaps. This segmentation allows each layer to be formed and controlled independently, simplifying the overall process despite the increased structural complexity.
Data Source
AI summary
A semiconductor memory device according to one embodiment includes a stacked body, a semiconductor pillar and a plurality of charge storage films. The stacked body includes a plurality of electrode films and air gaps. The plurality of electrode films are disposed to be separated from each other along a first direction. Each of the air gaps is made between the electrode films. The semiconductor pillar extends in the first direction and pierces the stacked body. The plurality of charge storage films are provided between the semiconductor pillar and the plurality of electrode films. The plurality of charge storage films are partitioned every electrode film.