Semiconductor Memory Device Barrier Film Oxidation Control
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high integration and efficient use of semiconductor columns due to limitations in the configuration and manufacturing process, particularly with the placement and oxidation of insulating members and electric charge accumulating films, which affect the threshold voltage of select transistors and overall device integration.
Innovation Solution
The semiconductor memory device incorporates a specific configuration with inter-string unit insulating members and electric charge accumulating films, where the insulating members are strategically positioned between semiconductor columns, and a manufacturing method that includes oxidation processes to adjust the threshold voltage, using barrier conductive films and metal films to prevent abnormal oxidation and ensure proper coverage, thereby enhancing integration and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If insulating members are placed between semiconductor columns to enable higher integration, then device integration is improved, but abnormal oxidation may occur affecting threshold voltage control
Solution Approach 1:
A barrier conductive film is introduced as an intermediary layer between the insulating member and the electric charge accumulating film. This barrier film prevents abnormal oxidation of the insulating member while allowing the device to achieve high integration. The barrier conductive film acts as a mediator that protects the insulating member from oxidation during manufacturing processes.
Solution Approach 2:
The barrier conductive film is formed on the insulating member before the electric charge accumulating film is deposited. This preliminary action ensures that the insulating member is protected from oxidation before it can affect the threshold voltage control, preventing potential reliability issues before they arise.
2Quantity of substance
If all semiconductor columns are used as memory cells to increase capacity, then storage density is improved, but threshold voltage adjustment becomes more difficult
Solution Approach 1:
The electric charge accumulating film is selectively formed only in regions where threshold voltage adjustment is needed, while the barrier conductive film is formed on insulating members in all regions. This local quality approach allows precise control of threshold voltage in specific areas while maintaining high integration across the entire device, enabling all semiconductor columns to be used as memory cells with differentiated control characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for higher integration of semiconductor memory devices, enabling the use of all semiconductor columns as memory cells and adjusting threshold voltages effectively, leading to improved device performance and reduced operational issues.
Implementation Method 1
a first metal oxide film covering a surface on one side and a surface on the other side in the stacking direction and an opposed surface to the semiconductor column of the first wiring
Implementation Method 2
a first metal oxide film covering a surface on one side and a surface on the other side in the stacking direction and an opposed surface to the semiconductor column of the first wiring
Implementation Method 3
The gate insulating film includes an electric charge accumulating film
Data Source
AI summary
A semiconductor memory device includes: wiring layers; a semiconductor column opposed to the wiring layers; a gate insulating film disposed between the wiring layers and the semiconductor column; and an insulating member in contact with the gate insulating film. A first wiring layer includes: a first wiring disposed on a gate insulating film side with respect to the insulating member; a second wiring disposed on a side opposite the first wiring; and a metal oxide film covering surfaces on one side and the other side in the stacking direction and not covering a contact surface with the insulating member of the second wiring. The second wiring includes a first conductive layer and a second conductive layer spaced apart in the stacking direction, and a first conductive portion connected to the first conductive layer and the second conductive layer. The first conductive portion includes the contact surface with the insulating member.