Semiconductor Memory Device Diagonal Cell Access
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Solution Overview
Problem
As semiconductor memory devices miniaturize, the proximity effect between adjacent memory cells increases, leading to noise in cell current during data reading and writing, which can slow down the sense amplifier's data sensing time and increase the risk of erroneous data detection.
Innovation Solution
The semiconductor memory device employs a configuration where sense amplifiers copy data from a first cell block to alternately arranged memory cells in second and third cell blocks, accessing memory cells in a diagonal direction to reduce proximity effects, allowing for high-speed reading and writing while minimizing erroneous data detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the interval between adjacent memory cells is reduced for miniaturization, then device density increases, but proximity effect noise increases
Solution Approach 1:
The patent accesses memory cells in a diagonal direction rather than along the row or column direction. This dimensional change in access pattern reduces the proximity effect noise because diagonally adjacent cells have smaller capacitance coupling compared to cells adjacent in the row or column direction, thereby suppressing noise while maintaining high device density
2Quantity of substance
If noise in cell current increases due to proximity effect, then data sensing time increases, but reducing interval between cells increases density
Solution Approach 1:
By accessing memory cells diagonally instead of along row or column directions, the patent reduces proximity effect noise, which directly decreases the time required for sense amplifiers to sense data while maintaining high device density through miniaturization
3Quantity of substance
If noise in cell current increases, then data detection accuracy decreases, but miniaturization increases device capacity
Solution Approach 1:
The patent improves data detection accuracy by accessing memory cells in a diagonal direction, which reduces proximity effect noise and back pattern noise. This allows reliable data detection even when device capacity is increased through miniaturization of the memory cell array
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables faster data reading and writing by suppressing proximity effects and reducing noise in cell current, ensuring accurate data detection and efficient operation.
Implementation Method 1
The proximity effect is interference that memory cells receive from adjacent memory cells due to capacitance coupling between adjacent plural memory cells and the like.
Data Source
AI summary
This disclosure concerns a memory including: word lines extending to a first direction; bit lines extending to a second direction crossing the first direction; a memory cell array including cell blocks each including memory cells respectively provided corresponding to intersection points of the word lines and the bit lines; and sense amplifiers provided corresponding to the bit lines, wherein the sense amplifiers copies existing data stored in a first cell block within the memory cell array to a plurality of memory cells, the memory cells being included in second and third cell blocks different from the first cell block, and alternately arranged in an extension direction of the word lines and also alternately arranged in an extension direction of the bit lines, and the sense amplifiers reads data from the second cell block or the third cell block, at a time of outputting data to outside of the sense amplifiers.