Semiconductor Memory Device Dynamic Discharge Control
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Solution Overview
Problem
Current semiconductor memory devices face inefficiencies in read operations due to unstable voltage control and high current consumption, leading to prolonged read times and potential noise issues in the control signals.
Innovation Solution
The semiconductor memory device incorporates a BLC driver with a determination circuit that dynamically controls the discharge of control signals, determining when to discharge based on the comparison result, thereby optimizing voltage stabilization and reducing current consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the read operation uses conventional voltage control without dynamic discharge control, then the voltage control is simpler, but the read time is prolonged and current consumption is high
Solution Approach 1:
The patent implements dynamic discharge control where the discharge timing of the control signal is adjusted based on the state of the sense amplifier. The discharge is performed at a timing when the sense amplifier has completed its operation, thereby dynamically optimizing the voltage stabilization time and reducing the overall read operation time while maintaining proper voltage levels.
Solution Approach 2:
The patent uses feedback from the sense amplifier's operation state to control the discharge timing of the control signal. The discharge control is triggered based on whether the sense amplifier has completed its read operation, creating a feedback mechanism that optimizes voltage control timing and reduces unnecessary waiting time in read operations.
2Reliability
If the control signal is discharged continuously to maintain voltage stability, then the voltage control is more stable, but the current consumption increases
Solution Approach 1:
The patent implements periodic discharge control where the control signal is discharged only at specific intervals when needed, rather than continuously. The discharge occurs periodically based on the sense amplifier's operation completion, maintaining voltage stability while significantly reducing current consumption compared to continuous discharge.
Solution Approach 2:
The discharge control mechanism automatically determines when discharge is needed based on the sense amplifier's state, eliminating the need for continuous external control. The system self-regulates the discharge timing to maintain voltage stability only when necessary, reducing unnecessary current consumption.
3Productivity
If the read operation is accelerated by aggressive voltage discharge, then the read time is reduced, but noise in control signals increases
Solution Approach 1:
The patent performs preliminary discharge control by discharging the control signal only after the sense amplifier has completed its operation. This preliminary timing ensures that the discharge does not interfere with the sense amplifier's sensitive operations, reducing noise generation while still enabling faster voltage stabilization for subsequent operations.
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a first memory cell; a first word line coupled to the first memory cell; a first sense amplifier including a first transistor; a first bit line which couples the first memory cell to the first transistor; and a first driver configured to supply a first control signal to a gate of the first transistor. The first driver includes a first circuit configured to compare the first control signal and a second control signal to generate a third control signal based on a comparison result.