Semiconductor Memory Dummy Pulse Initialization
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Solution Overview
Problem
Existing semiconductor devices face errors during read operations due to incorrect sensing of threshold voltage after program or erase operations, affecting operational reliability and accuracy.
Innovation Solution
A semiconductor device with a plurality of memory blocks and an operation circuit that applies a dummy pulse with a positive potential to local lines after completing program or erase operations to initialize the channel region, preventing errors during read operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If program or erase operations are performed on memory cells, then data storage capability is improved, but threshold voltage sensing accuracy deteriorates
Solution Approach 1:
A dummy read operation is performed as a preliminary action after program/erase operations and before actual read operations. This dummy read initializes the channel region by applying a dummy pulse, ensuring that subsequent read operations can accurately sense the threshold voltage without interference from residual charges in the channel region.
2Speed
If read operations are performed immediately after program or erase operations, then operational speed is improved, but sensing accuracy deteriorates
Solution Approach 1:
The dummy read operation serves as a preliminary initialization step that must be performed before actual read operations. This ensures that even when read operations follow program/erase operations immediately, the channel region is properly initialized to allow accurate sensing.
Solution Approach 2:
The dummy read operation extracts and performs a separate initialization function from the main read operation sequence. By separating the initialization task into a distinct dummy read step, the system can maintain fast operational speed while ensuring sensing accuracy through proper channel region initialization.
3Device complexity
If channel region is not initialized, then device complexity is reduced, but read operation accuracy deteriorates
Solution Approach 1:
The dummy read operation is a simple preliminary action that applies a dummy pulse to initialize the channel region. This simple initialization step prevents complex errors during read operations by ensuring the channel is in a known state, thereby improving read accuracy without requiring complex initialization circuits.
Data Source
AI summary
A semiconductor device includes a plurality of memory blocks including a plurality of memory cells, wherein the plurality of memory cells are divided into a plurality of pages; and an operation circuit configured to output operating voltages to local lines of a selected memory block, among the plurality of memory blocks, to perform a program operation, a read operation and an erase operation on the selected memory block, wherein the operation circuit is configured to apply a dummy pulse having a positive potential to the local lines of the selected memory block after completing the program operation, the read operation and the erase operation.