Semiconductor Memory Device Dynamic ECC Switching
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Solution Overview
Problem
Existing NAND flash memory devices face challenges in balancing error detection and correction capability with reading and writing performance, particularly due to increased processing time and wafer size as data size grows, and the need to adapt to changing error frequencies over the product life cycle.
Innovation Solution
A semiconductor memory device with an error detection and correction method that switches between different error detection and correction functions, such as 1-bit Hamming code and 8-bit BCH codes, based on selection information, allowing for optimal management of error detection and correction capability and operational performance during the read and write operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a stronger error detection and correction function (e.g., 8-bit BCH codes) is used, then error correction capability is improved, but processing time increases and reading/writing performance deteriorates
Solution Approach 1:
The patent implements dynamic switching between different ECC functions (1-bit Hamming code and 8-bit BCH codes) based on the product life cycle stage. The controller automatically selects the appropriate ECC strength: using weaker 1-bit correction during early stages when errors are rare, and switching to stronger 8-bit correction when error frequency increases over time. This dynamic adaptation resolves the contradiction by adjusting error correction capability according to actual needs, avoiding constant use of strong correction that would unnecessarily increase processing time.
2Reliability
If a stronger error detection and correction function is used, then error correction capability is improved, but wafer size increases
Solution Approach 1:
The patent integrates multiple ECC functions (both 1-bit Hamming code and 8-bit BCH codes) within a single ECC circuit unit, making the circuit multi-functional. The same physical hardware can perform different levels of error correction depending on the selected mode. This universal design allows the system to achieve strong error correction capability when needed without permanently increasing wafer size with dedicated hardware for each ECC level, as only one set of circuit resources is required to support multiple functions.
3Reliability
If error detection and correction capability is enhanced, then reliability is improved, but reading and writing performance deteriorates
Solution Approach 1:
The patent dynamically adjusts the ECC processing strength based on the product life cycle and error frequency. During early product life when errors are rare, the system uses weaker 1-bit correction to maintain high reading/writing performance. When the product ages and error frequency increases, the controller switches to stronger 8-bit correction to maintain reliability. This dynamic adjustment ensures that reading and writing performance is optimized for each operational stage, avoiding the permanent performance penalty that would result from always using strong ECC.
Data Source
AI summary
An error detection and correction method for a flash memory includes: a setting step, setting selection information to select a first error detection and correction function for performing 1-bit error detection and correction or a second error detection and correction function for performing multiple-bit error detection and correction; and an executing step, performing the first error detection and correction function or the second error detection and correction function based on the selection information during a read operation or a write operation.


