Semiconductor Memory Device Hydrogen Blocking Insulator
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The yield of semiconductor memory devices is hindered by hydrogen generation during the formation of stacked wiring, which can lead to performance degradation of transistors in the peripheral circuit due to hydrogen penetration.
Innovation Solution
Incorporating blocking portions made of insulating films that separate the stacked wiring from the transistor region, effectively blocking hydrogen penetration and preventing performance degradation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If stacked wiring is formed during manufacturing, then device functionality is improved, but hydrogen is generated that penetrates into transistor regions causing performance degradation
Solution Approach 1:
The substrate is divided into distinct regions: a first region for memory cells, a second region for control circuits, and a third region acting as a separation zone. This spatial segmentation prevents hydrogen generated in the stacked wiring region from reaching the transistor region, thus resolving the contradiction between maintaining device functionality and preventing transistor performance degradation.
Solution Approach 2:
A third conductor layer is introduced as an intermediary element between the stacked wiring and the transistor region. This intermediate structure acts as a barrier that blocks hydrogen penetration while allowing the stacked wiring to maintain its electrical functionality, thereby protecting transistor performance without compromising device operation.
2Reliability
If blocking portions are added to prevent hydrogen penetration, then transistor reliability is improved, but device structure becomes more complex
Solution Approach 1:
The third conductor layer serves multiple functions simultaneously: it acts as an electrical conductor for signal transmission and as a blocking portion that prevents hydrogen penetration. This multi-functionality reduces the need for additional dedicated blocking structures, thereby limiting the increase in device complexity while maintaining transistor reliability.
Solution Approach 2:
The blocking function is merged with the conductor layer that is already part of the stacked wiring structure. By combining the hydrogen-blocking capability with the existing electrical conductor, the design avoids adding separate blocking components, thus minimizing structural complexity while achieving the reliability improvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the yield of semiconductor memory devices by preventing hydrogen-induced performance degradation of transistors, ensuring better device reliability.
Implementation Method 1
In a semiconductor device, a first insulator layer extending from a first region, in which memory cells are arranged, to a second region, in which control circuits are arranged, is provided. The first insulator layer includes a first portion, which is above a third conductor layer at a height from the substrate higher than a height of an uppermost one of first conductor layers, and a second portion continuous with the first portion and extending to a surface of the substrate in a third region separating the first region and the second region.
Data Source
AI summary
A semiconductor memory device includes a substrate, first conductor layers, second conductor layers, a third conductor layer, and an insulator layer. The substrate includes a first region, a second region, and a third region separating the first and second regions. The first conductor layers are above the first region. The second conductor layers are above an uppermost one of the first conductor layers. The third conductor layer is above the second region. The insulator layer is above the second and third regions. The insulator layer includes first and second portions. The first portion is above the third conductor layer at a height from the substrate greater than a height of the uppermost one of the first conductor layers and extends along a substrate surface direction. The second portion extends along a substrate thickness direction and contacts a surface of the substrate in the third region.