Semiconductor Memory Component with Integrated Nano-Battery
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Solution Overview
Problem
Existing semiconductor memory devices waste surface area as only a portion is used for information storage, and integrating a battery is complex, requiring additional manufacturing steps and surface area.
Innovation Solution
A semiconductor component is designed with a flat electrode, an active electrode separated by an electrolyte layer, and a vertical pillar with an information storage layer, where the materials form an energy storage zone, allowing the unused surface to be used for energy storage and simplifying battery integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a battery is integrated into a memory device using additional manufacturing steps on another part of the substrate, then energy storage functionality is added, but the device complexity and manufacturing process complexity increase
Solution Approach 1:
The patent merges the memory cell structure with the battery structure by using the same electrodes and electrolyte layer for both information storage and energy storage functions. The first electrode, second electrode, and electrolyte layer are shared between the memory point and the energy storage zone, eliminating the need for separate battery manufacturing steps and reducing device complexity.
Solution Approach 2:
The electrodes and electrolyte layer serve dual purposes: they enable both information storage (through resistive switching in the memory point) and energy storage (through electrochemical reactions in the energy storage zone). This multi-functionality allows a single structure to fulfill multiple roles, simplifying the overall device architecture and manufacturing process.
2Productivity
If only a part of the memory cell surface is used for information storage, then information storage functionality is achieved, but the surface area utilization is inefficient
Solution Approach 1:
The entire memory cell surface is utilized by implementing multi-functionality: the same electrodes and electrolyte layer serve both information storage and energy storage purposes. The first electrode, second electrode, and electrolyte layer are used in both the memory point and the energy storage zone, ensuring complete surface utilization without wasted areas.
Solution Approach 2:
The patent transitions from single-function vertical structures to multi-functional structures by adding the energy storage dimension alongside the information storage function. This allows the same physical space to serve multiple purposes, effectively doubling the functional capacity of each memory cell without increasing surface area.
3Use of energy by moving object
If external batteries are used to supply energy to memory devices, then energy supply is ensured, but the device complexity and external component requirements increase
Solution Approach 1:
The patent combines the energy storage function directly into the memory cell structure by integrating an energy storage zone using the same electrodes and electrolyte layer. This eliminates the need for external batteries and their associated connection components, reducing device complexity while ensuring continuous energy supply for memory operations.
Solution Approach 2:
The memory device becomes self-sufficient by incorporating an internal energy storage zone that supplies power directly to the memory point. The integrated battery structure eliminates dependence on external power sources, allowing the device to service its own energy needs without additional external components or complex power management systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables efficient use of surface area for both memory and energy storage, reducing manufacturing steps and allowing the component to supply energy to itself or other devices without external batteries.
Implementation Method 1
the operation of which is based on the occurrence of oxidation-reduction reactions, makes it possible to make an intrinsic electromotive force or emf stemming from the movement of ions appear
Implementation Method 2
an intrinsic electromotive force or emf stemming from the movement of ions
Implementation Method 3
This electromotive force is considered as a voltage generated by the component
Data Source
AI summary
A semiconductor component includes a first electrode, designated flat electrode, defining a plane; a second electrode, designated active electrode, separated from the first electrode by an electrolyte layer; a pillar, designated vertical pillar, extending essentially along an axis perpendicular to the plane defined by the flat electrode, the pillar including a third electrode, designated vertical electrode and an information storage layer, the information storage layer covering a surface of the vertical electrode; the flat electrode and the vertical pillar being laid out so as to form a memory point. In addition, the materials of the active electrode and the electrolyte layer are chosen so as to form an energy storage zone with the flat electrode.