Semiconductor Memory Power Control via Temperature-Adaptive Sense Amplifiers
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Solution Overview
Problem
Semiconductor memory devices face challenges in efficiently managing power consumption and data retention time, particularly as internal temperatures fluctuate, leading to reduced performance and increased malfunctions.
Innovation Solution
A semiconductor system comprising a controller, mode signal generator, temperature signal generator, power control signal generator, and sense amplifier circuit, which dynamically adjusts power signals based on temperature conditions to optimize power usage and data retention by enabling or disabling power control signals in response to internal temperature levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If power control signals are continuously enabled to maintain high performance, then data retention time is improved, but power consumption increases
Solution Approach 1:
The patent applies dynamics by making the power control signal generation adaptive to temperature conditions. The system dynamically adjusts whether to enable power control signals based on real-time temperature sensing, transitioning from a static always-on approach to a dynamic conditional approach that optimizes both data retention and power consumption
2Use of energy by moving object
If power control signals are disabled to reduce power consumption, then power usage decreases, but data retention time and reliability deteriorate
Solution Approach 1:
The patent applies parameter changes by using temperature as a critical parameter to determine power control signal generation. The system changes its operational parameters (power signal enablement) based on the temperature parameter, ensuring data retention is maintained when temperatures are high while allowing power savings when temperatures are low
3Device complexity
If temperature is not monitored and power signals are fixed, then device complexity is reduced, but performance and reliability deteriorate under varying temperature conditions
Solution Approach 1:
The patent applies feedback by implementing a temperature sensing mechanism that continuously monitors the memory device's temperature and feeds this information back to the power control signal generator. This closed-loop feedback system enables the device to automatically adjust its power control signals based on actual temperature conditions, maintaining performance stability without requiring complex external control
Data Source
AI summary
The semiconductor memory device includes a power control signal generator and a sense amplifier circuit. The power control signal generator generates a first power control signal that is enabled in response to a temperature latch signal generated in response to latching a temperature signal in a predetermined mode. The sense amplifier circuit generates a first power signal having a first drive voltage in response to the first power control signal. In addition, the sense amplifier circuit senses and amplifies a voltage level of a bit line using the first power signal as a power supply voltage.