Semiconductor Memory Segmentation for Power and Area Optimization
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Solution Overview
Problem
The miniaturization of electronic devices, such as wearable and IoT devices, requires smaller and more power-efficient integrated circuit chips, as traditional memory solutions consume excessive power and increase chip size due to limited memory capacity.
Innovation Solution
A semiconductor device with a processor core and multiple memory types, including SRAM and MRAM with different MTJ structures, selectively stores data based on attributes, optimizing memory usage and power efficiency by allocating data to appropriate memory types based on virtual address ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If traditional memory solutions are used to increase memory capacity, then memory capacity is improved, but chip size increases and power consumption increases
Solution Approach 1:
The patent divides the memory system into multiple types of memory (e.g., SRAM, MRAM, PRAM) with different characteristics. Each memory type is segmented to store specific types of data based on access patterns and power requirements, allowing the system to achieve high memory capacity without proportionally increasing chip size, as different memory types have different area efficiency ratios.
Solution Approach 2:
Different regions of the memory system are assigned different qualities or characteristics. For example, frequently accessed data is stored in faster but more power-consuming memory (SRAM), while less frequently accessed data is stored in slower but more area-efficient memory (MRAM/PRAM). This local differentiation optimizes the overall chip area utilization while maintaining required memory capacity.
2Quantity of substance
If traditional memory solutions are used to increase memory capacity, then memory capacity is improved, but power consumption increases
Solution Approach 1:
The memory system is segmented into multiple memory types with different power characteristics. Volatile memory (SRAM) is used for frequently accessed data requiring fast access, while non-volatile or low-power memory (MRAM, PRAM) is used for less frequently accessed data. This segmentation allows the system to achieve high memory capacity while minimizing overall power consumption by matching data access patterns with appropriate memory types.
Solution Approach 2:
Different power characteristics are assigned to different memory regions based on local data access requirements. Hot data (frequently accessed) is stored in higher-power but faster memory, while cold data (infrequently accessed) is stored in lower-power memory. This local quality differentiation enables the system to scale memory capacity without linearly increasing power consumption.
3Quantity of substance
If buffer memory capacity is increased for wearable devices, then data buffering capability is improved, but power leakage increases
Solution Approach 1:
The buffer memory is segmented into volatile and non-volatile portions. The volatile portion (SRAM) provides fast buffering for active data processing, while the non-volatile portion (MRAM, PRAM) provides persistent storage with minimal power leakage when not actively accessed. This segmentation allows wearable devices to have large buffer memory capacity while maintaining low power leakage during idle periods.
Solution Approach 2:
Different power retention characteristics are applied to different buffer memory regions. Frequently accessed buffer data remains in volatile memory for speed, while less frequently accessed data is stored in non-volatile memory that retains data with minimal power consumption. This local differentiation enables large buffer capacity in power-constrained wearable devices.
4Quantity of substance
If multiple different memories are mounted on a single semiconductor chip, then memory capacity and efficiency are improved, but device complexity increases
Solution Approach 1:
The patent implements a segmented memory architecture where different memory types are clearly divided and assigned specific functions. This segmentation, while adding multiple memory components, organizes the complexity through functional differentiation, making the system manageable through clear separation of concerns rather than a monolithic memory structure.
Solution Approach 2:
The memory system is designed with multi-functionality, where a unified memory interface and control logic manage multiple types of memory (SRAM, MRAM, PRAM) through a single architecture. This universality allows the system to handle different memory types through a common interface, reducing the complexity that would otherwise arise from managing multiple independent memory subsystems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances input/output efficiency and reduces power consumption by utilizing high-speed SRAM for frequent operations and power-efficient MRAM for data storage, allowing for increased memory capacity without enlarging the chip size or increasing power consumption.
Implementation Method 1
a second memory including a magneto-resistive random access memory (MRAM) cell having a first Magnetic Tunnel Junction (MTJ) structure
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes: a processor core which processes program data; a first memory mounted on the same semiconductor chip as the processor core; a second memory including an MRAM cell having a first MTJ (Magnetic Tunnel Junction) structure; a third memory including an MRAM cell having a second MTJ structure different from the first MTJ structure, wherein the processor core selectively stores the program data in one of the first memory, the second memory and the third memory, on the basis of an attribute of the program data.