Semiconductor Memory Device Single Magnetic Induction Layer Logic
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Solution Overview
Problem
Existing semiconductor memory devices require multiple magnetic induction layers to process multiple input values, leading to complex manufacturing processes and high current requirements, as the direction of magnetically induced currents is determined by individual input values rather than logical combinations.
Innovation Solution
A semiconductor memory device with a single magnetic induction layer and a current driving circuit that logically combines multiple input values to change the direction of the magnetically induced current, reducing the number of magnetic induction layers needed and simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple magnetic induction layers are used to process multiple input values, then the device can represent individual input values directly, but the manufacturing process becomes complex and current requirements increase
Solution Approach 1:
The patent combines multiple magnetic induction layers into a single magnetic induction layer. The current driving circuit integrates multiple input signals and generates a single magnetically induced current that flows through the single magnetic induction layer. This merging approach maintains the ability to process multiple input values while simplifying the device structure and manufacturing process.
Solution Approach 2:
The single magnetic induction layer serves multiple functions by processing logically combined input values. The current driving circuit enables the single layer to handle multiple input signals through logical operations, making the magnetic induction layer universal in its ability to process various input combinations without requiring separate layers for each input.
2Adaptability or versatility
If multiple magnetic induction layers are used to process multiple input values, then each input can be represented individually, but the current requirements increase
Solution Approach 1:
The patent merges multiple magnetic induction layers into one, and combines the current paths for multiple inputs into a single magnetically induced current path. This reduces the total current requirements because instead of requiring sufficient current to flow through multiple separate layers, the system only needs to provide enough current to flow through the single combined layer, thereby reducing energy consumption.
3Ease of operation
If the direction of magnetically induced current is determined by individual input values, then each input has direct control, but the device complexity increases
Solution Approach 1:
The current driving circuit acts as an intermediary between the multiple input values and the single magnetic induction layer. It performs logical operations on the input signals and generates the appropriate magnetically induced current direction based on the logical combination of inputs. This intermediary approach maintains direct control capability while simplifying the overall device structure by using a single magnetic induction layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient representation of logical combinations using a single magnetic induction layer, reducing manufacturing complexity and current requirements while maintaining high resistance variability based on logical operations.
Implementation Method 1
The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current
Implementation Method 2
Magnetic RAMs use a giant magnetoresistive (GMR) phenomenon or a spin polarization magnetic permeation phenomenon which are generated because a spin largely affects the electron transfer phenomenon
Implementation Method 3
Magnetic RAMs employing the spin polarization magnetic permeation use the phenomenon that a case where spin directions of two magnetic layers are identical to each other has current permeation better than a case where the spin directions are different from each other
Data Source
AI summary
Provided are a semiconductor memory device and a magneto-logic circuit which change the direction of a magnetically induced current according to a logical combination of logic states of a plurality of input values. The semiconductor memory device comprises a current driving circuit, a magnetic induction layer, and a resistance-variable element. The current driving circuit receives a plurality of input values and changes the direction of a magnetically induced current according to a logical combination of logic states of the input values. The magnetic induction layer induces magnetism having a direction varying according to the direction of the magnetically induced current. The resistance-variable element has a resistance varying according to the direction of the magnetism induced by the magnetic induction layer.