3D Semiconductor Memory Device With Stepped Electrode Recess Holes
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Solution Overview
Problem
The integration of two-dimensional semiconductor memory devices is limited by cost considerations due to the need for expensive equipment for fine pattern formation, and there is a need for a more efficient and cost-effective method to increase the degree of integration.
Innovation Solution
A semiconductor memory device with a three-dimensional structure is proposed, featuring a substrate with a cell array region and connection region, including a bottom electrode structure and top electrode structure with recess holes of varying depths, allowing for increased integration without the need for extensive fine pattern formation equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If two-dimensional planar semiconductor memory device structure is used, then manufacturing process is simpler, but degree of integration is limited
Solution Approach 1:
The patent transitions from a two-dimensional planar structure to a three-dimensional structure by stacking multiple electrode structures vertically. The electrode structures are arranged in layers with bottom electrodes, intermediate electrodes, and top electrodes stacked in the vertical direction, enabling increased integration density without requiring finer lateral patterning.
2Quantity of substance
If fine pattern formation techniques are advanced to increase integration, then degree of integration improves, but manufacturing cost increases
Solution Approach 1:
Instead of achieving higher integration through lateral pattern refinement, the patent achieves it through vertical stacking of electrode structures. This dimensional transition allows integration scaling without proportionally increasing the complexity and cost of lithography and patterning processes.
Solution Approach 2:
The memory device is divided into multiple discrete electrode structures stacked vertically, each comprising bottom electrodes, intermediate electrodes, and top electrodes. This segmentation into stackable units enables modular manufacturing where each layer can be formed and connected systematically, reducing overall manufacturing complexity.
3Quantity of substance
If three-dimensional electrode structure with recess holes is used, then integration density increases, but manufacturing precision requirements increase
Solution Approach 1:
The electrode structures have different local properties: bottom electrodes are positioned at different heights in the vertical direction, intermediate electrodes are selectively formed in certain regions, and top electrodes have varying thicknesses. This local differentiation allows the structure to achieve high integration density while maintaining manufacturability through region-specific optimization.
Solution Approach 2:
The bottom electrodes are formed first at different heights, creating a preliminary structure that guides subsequent formation of intermediate and top electrodes. This sequential, pre-planned construction approach allows precise positioning of recess holes and electrode connections without requiring all dimensions to be controlled simultaneously at high precision.
Data Source
AI summary
A semiconductor memory device includes a substrate defined with a cell array region and a connection region which extends in a first direction from the cell array region; an electrode structure including a bottom electrode structure which includes plurality of bottom electrodes stacked on the substrate to be separated from one another and a top electrode structure which includes plurality of top electrodes stacked on the bottom electrode structure to be separated from one another and has a stepped structure which includes plurality of stepping surfaces, in the connection region; and plurality of recess holes formed to a first depth from stepping surfaces of the stepped structure, and having bottom surfaces which expose the bottom electrode structure, wherein the first depth is substantially same as a height of the top electrode structure, and distances of the bottom surfaces of the recess holes from the substrate are different from one another.