Semiconductor Memory Virtual Power Supply Speed Reliability

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Solution Overview

Problem

Semiconductor devices face challenges in operating at high speeds without increasing power supply voltage, which can shorten device life, increase noise, and lead to higher power consumption, especially in mobile devices with limited battery power.

Innovation Solution

A semiconductor device employing a virtual power supplier that boosts driving voltage to generate a virtual voltage, allowing the driving signal generator to produce a reinforced driving signal, thereby enhancing operating speed without increasing the power supply voltage, and reducing noise and power consumption by using capacitively-coupled conductors to control the boosting timing of ground and power supply voltages.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If high power supply voltage is used to operate at fast operating speeds, then operating speed is improved, but device life is shortened and noise increases

Engineering Contradiction:
Improveoperating speedVSAvoiddevice life
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent segments the power supply system into multiple voltage domains by introducing a virtual ground voltage (VGND) that is boosted to a higher potential than the actual ground voltage (VSS). This creates separate power supply paths: one for the memory cell array operating at standard voltage, and another for the peripheral circuits operating at boosted voltage levels, thereby enabling fast operation without compromising device reliability

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a virtual ground voltage (VGND) as an intermediary voltage level between the actual ground (VSS) and the power supply voltage (VDD). This virtual ground serves as a mediator that allows peripheral circuits to operate at higher effective voltage levels for fast operation, while the memory cell array continues to operate at standard voltage levels, thus resolving the contradiction between speed and reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

2Speed

If high power supply voltage is used to operate at fast operating speeds, then operating speed is improved, but noise on power supply lines increases

Engineering Contradiction:
Improveoperating speedVSAvoidnoise
Core Design Contradiction:
SpeedVSObject-generated harmful factors

Solution Approach 1:

The patent segments the power supply network into distinct voltage domains, isolating the high-speed peripheral circuits on a separate boosted voltage domain from the memory cell array. This segmentation prevents noise generated by fast switching in peripheral circuits from coupling into the power supply lines of the memory array, thereby achieving fast operation without excessive noise

Inventive Principle:
Principle #1Segmentation

3Speed

If high power supply voltage is used to operate at fast operating speeds, then operating speed is improved, but power consumption increases

Engineering Contradiction:
Improveoperating speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies local quality by providing different voltage levels to different parts of the system: the memory cell array operates at standard voltage for low power consumption, while only the peripheral circuits that require fast operation receive the boosted virtual ground voltage. This localized high-voltage application enables fast operation where needed without increasing overall system power consumption

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables semiconductor devices to operate at enhanced speeds with stable power supply, reduced noise, and decreased power consumption, while maintaining the existing power supply voltage, thus extending device life and improving performance in mobile applications.

Implementation Method 1

The virtual power supplier may include conductors capacitively-coupled to each other to generate the virtual voltage.

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS9240223B2Semiconductor memory devices with a power supply
Publication Date: 2016.01.19 SAMSUNG ELECTRONICS CO LTD
  • US9240223B2 patent drawing
  • US9240223B2 patent drawing
  • US9240223B2 patent drawing

AI summary

A semiconductor device includes a virtual power supplier, a driving signal generator and a load driver. The virtual power supplier boosts a driving voltage to generate a virtual voltage. The driving signal generator generates a driving signal based on the virtual voltage, such that the driving signal has a voltage level that is reinforced as compared with a voltage level of the driving voltage. The load driver drives a load based on the driving voltage and the driving signal.