Semiconductor Device Metal Dummy Reflective Pattern

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Solution Overview

Problem

The existing methods for fabricating semiconductor devices with metal dummy patterns and thin film resistors result in irregular pattern profiles for thin film resistors, leading to inconsistent resistance values due to light reflection from randomly formed metal dummies during the exposure process.

Innovation Solution

Incorporating a reflective pattern corresponding to the periphery of the thin film resistor within the metal dummy pattern, which extends in the same direction and is coplanar with the metal dummy, to uniformly reflect light and maintain a regular profile of the thin film resistor.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If metal dummy patterns are randomly formed to reduce density difference and prevent high difference during CMP process, then uniformity of metal array is improved, but the thin film resistor develops irregular pattern profile due to light reflection from metal dummies

Engineering Contradiction:

Improveuniformity of metal arrayVSAvoidpattern profile regularity of thin film resistor

Core Design Contradiction:

Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent applies local quality by creating a specific reflective pattern only in the peripheral regions surrounding the thin film resistor, rather than uniformly across the entire substrate. This localized reflective pattern selectively addresses the light reflection problem at the resistor edges while maintaining the random metal dummy distribution in other areas for CMP uniformity.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The reflective pattern is formed in advance during the metal dummy formation process, before the thin film resistor exposure process occurs. This preliminary action ensures that when exposure light passes through the thin film resistor, the reflective pattern is already in place to prevent irregular pattern profiling.

Inventive Principle:

Principle #10Preliminary action

2Quantity of substance

If metal dummy patterns are randomly formed during fabrication, then density difference is reduced, but light reflection from metal dummies deforms the thin film resistor line during exposure

Engineering Contradiction:

Improvemetal density distributionVSAvoidlight reflection causing pattern deformation

Core Design Contradiction:

Quantity of substanceVSObject-affected harmful factors

Solution Approach 1:

The patent converts the harmful light reflection effect into a beneficial one by strategically placing metal dummy patterns with specific reflectivity in the peripheral regions. Instead of trying to eliminate reflection, the invention uses controlled reflection from the reflective pattern to counteract unwanted light transmission effects during exposure, thereby protecting the thin film resistor pattern integrity.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

3Stability of the object's composition

If thin film resistor is formed over randomly distributed metal dummies, then metal density uniformity is achieved, but resistance value uniformity cannot be satisfied due to irregular pattern profile

Engineering Contradiction:

Improvemetal density uniformityVSAvoidresistance value uniformity

Core Design Contradiction:

Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The reflective pattern is specifically positioned in the peripheral regions surrounding the thin film resistor, creating a localized solution that does not interfere with the random metal dummy distribution in the bulk area. This local intervention preserves metal density uniformity while selectively preventing pattern profile irregularities at critical edges.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The reflective pattern is formed in advance to preemptively counteract the harmful light reflection effects that would otherwise occur during the subsequent exposure process. By establishing this protective reflective structure beforehand, the patent prevents pattern deformation before it can occur, ensuring resistance value uniformity.

Inventive Principle:

Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures stable resistance characteristics and addresses the mismatch issues by maintaining a uniform profile and resistance value, enhancing the semiconductor device's performance.

Implementation Method 1

a portion of light may pass through the thin film resistor 60 having a small thickness. The light passing through the thin film resistor 60 is reflected by the metal dummy disposed under the thin film resistor 60

Methodology Applied

Scientific EffectLight reflection: Reflection

Data Source

PatentUS8643143B2Semiconductor device and method of fabricating the same

Publication Date: 2014.02.04 DONGBU HITEK CO LTD

AI summary

Provided is a semiconductor device including a metal dummy pattern and a thin film resistor. In detail, a semiconductor device includes a semiconductor substrate, a thin film resistor, and a metal dummy pattern. The thin film resistor disposed over the semiconductor substrate and extending in a first direction relative to the semiconductor substrate. The metal dummy pattern disposed between the semiconductor substrate and the thin film resistor, the metal dummy pattern including a reflective pattern extending in the first direction semiconductor substrate and spatially corresponding to a periphery of the thin film resistor.