Semiconductor Device Metal Frame Warpage Reduction
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Solution Overview
Problem
Current semiconductor device packaging technologies face challenges in achieving high-density, thin, and reliable devices due to issues with warpage, heat radiation, and increased manufacturing complexity, particularly when using resin-based frames and interconnect structures.
Innovation Solution
A semiconductor device design featuring a metal frame with a penetrating opening, an insulating layer covering the semiconductor chip, an interconnect layer on the upper surface of the metal frame, and a resin layer on the lower surface, along with a metal pattern underneath the semiconductor chip for enhanced heat dissipation and stability, addresses these challenges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a resin-based frame and interconnect structure are used, then manufacturing complexity is reduced, but warpage occurs and heat radiation performance deteriorates
Solution Approach 1:
The patent employs a composite structure combining resin-based interconnect layers with a metal frame. The metal frame provides dimensional stability and prevents warpage, while the resin layers enable simplified manufacturing processes. This composite approach allows the device to benefit from both the ease of resin-based manufacturing and the dimensional stability of metal structures.
2Ease of manufacture
If a resin-based frame and interconnect structure are used, then manufacturing complexity is reduced, but heat radiation performance deteriorates
Solution Approach 1:
The metal frame serves as an effective heat dissipation pathway, conducting heat away from the semiconductor chip. The resin-based interconnect layers maintain manufacturing simplicity while the metal frame compensates for the poor thermal conductivity of resin, achieving both ease of manufacture and adequate heat radiation performance.
3Ease of manufacture
If through-holes are used in substrate, then wiring interconnection is achieved, but substrate thickness increases and pitch becomes large
Solution Approach 1:
The patent eliminates through-holes from the substrate structure by using a build-up interconnect approach. Wiring is formed by depositing conductive layers and patterning them directly on the substrate surface, removing the need for vertical through-hole connections. This extraction of the through-hole concept enables substrate thinning while maintaining wiring functionality.
4Ease of manufacture
If bump-based interconnection is used, then semiconductor chip and wiring substrate are connected, but connection points are liable to break down and electric resistance increases
Solution Approach 1:
The patent eliminates bump-based interconnection by using direct wire bonding or flip-chip bonding with fine-pitch contacts. This removal of the bump structure avoids the reliability issues associated with bump breakdown and high electric resistance, achieving both ease of manufacture and improved connection integrity.
5Ease of manufacture
If wire bonding interconnection is used, then interconnection is achieved, but wire diameter must be decreased to narrow pitch, making wire liable to break
Solution Approach 1:
The patent replaces traditional wire bonding with alternative interconnection methods such as direct chip-to-substrate bonding or fine-pitch flip-chip technology. This extraction of the wire bonding concept eliminates the strength problem associated with thin wires, maintaining ease of manufacture while improving mechanical robustness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables the creation of high-density, thin semiconductor devices with improved reliability and simplified manufacturing, reducing warpage and enhancing heat radiation performance while maintaining high connection integrity.
Implementation Method 1
a metal pattern underneath the semiconductor chip for enhanced heat dissipation
Data Source
AI summary
A semiconductor device including a metal frame having a penetrating opening; a semiconductor chip provided in the opening; an insulating layer provided on the upper surface of the metal frame such that the insulating layer covers the upper surface, which is the circuit-formed surface of the semiconductor chip; an interconnect layer provided only on the upper-surface side of the metal frame with intervention of the insulating material and electrically connected to a circuit of the semiconductor chip; a via conductor provided on the upper surface of said semiconductor chip to electrically connect the circuit of the semiconductor chip and the interconnect layer; and a resin layer provided on the lower surface of the metal frame.