Semiconductor Device Metal Interconnect Layering for Short Circuit Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
As semiconductor device design becomes more complex and density increases, the probability of short circuits rises due to reduced design rules, which existing technologies struggle to prevent effectively.
Innovation Solution
The semiconductor device design incorporates metal interconnects in different layers, with specific layering and positioning of gate lines and power rails to minimize the probability of short circuits, including the use of copper and tungsten for certain interconnects and the strategic placement of contacts to enhance signal routing and reduce track loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If design rules are decreased to increase density, then productivity is improved, but reliability deteriorates due to increased short circuit probability
Solution Approach 1:
The patent applies dimensional separation by placing metal interconnects in different layers (vertical dimension) rather than only in the same plane. Specifically, the first metal interconnect is positioned in a first layer while the second metal interconnect is positioned in a second layer, both overlapping the active region. This multi-layer stacking approach increases device density within the same footprint while maintaining adequate spacing between conductors to prevent short circuits, thus resolving the contradiction between high density and low short circuit probability.
2Device complexity
If metal interconnects are placed in the same layer to simplify routing, then device complexity is reduced, but reliability deteriorates due to increased short circuit risk
Solution Approach 1:
The patent resolves this contradiction by transitioning from planar routing to multi-layer routing. The first metal interconnect and second metal interconnect are placed in different layers (first layer and second layer respectively), allowing them to overlap the same active region without risking short circuits. This vertical separation maintains routing simplicity while eliminating the short circuit hazard of co-planar placement.
Solution Approach 2:
The patent implements nesting by having multiple metal interconnect layers overlap the same active region footprint. The first metal interconnect in the first layer and the second metal interconnect in the second layer are both positioned to overlap the active region, creating a nested vertical structure. This allows efficient use of space while maintaining electrical isolation between layers through insulating materials.
3Ease of operation
If multiple metal interconnects overlap the active region to improve signal routing, then ease of operation is improved, but reliability worsens due to potential track loss
Solution Approach 1:
The patent enables improved signal routing by allowing multiple metal interconnects to overlap the active region, but prevents track loss by positioning these interconnects in different layers. The first metal interconnect is in the first layer and the second metal interconnect is in the second layer, both overlapping the active region for enhanced routing flexibility. The vertical separation through layers eliminates the track loss risk that would exist if multiple interconnects were placed in the same layer.
Data Source
AI summary
A semiconductor device is provided. The semiconductor device includes an active region, a gate line, a first metal interconnect, a power rail, and a second metal interconnect. The gate line overlaps the active region and extends along a first direction. The first metal interconnect overlaps the active region and the gate line. The first metal interconnect extends along a second direction intersecting the first direction. The power rail is disposed in a higher layer than the first metal interconnect. The power rail extends along the second direction. The second metal interconnect is disposed in a same layer as the power rail, the second metal interconnect extends along the second direction.