Semiconductor Sensor for Real-Time Metal Ion Detection
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Solution Overview
Problem
Current methods for detecting and removing metal ion contamination in semiconductor processing solutions are time-dependent, prone to human error, and do not provide real-time, in-situ results, leading to potential device contamination and equipment degradation.
Innovation Solution
A semiconductor device with N-type and P-type material areas is used, creating a P/N junction through optical illumination to attract and trap metal ions, allowing for real-time monitoring of conductance changes to calculate ion concentration and facilitate in-situ detection and removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If spectroscopic analytical techniques (atomic absorption or fluorimetry) are used to analyze metal ion contamination, then measurement precision is improved, but loss of time increases and productivity decreases due to time-dependent analysis and lack of real-time results
Solution Approach 1:
The patent replaces traditional mechanical/chemical spectroscopic analysis systems with a semiconductor-based electrochemical sensor system. The semiconductor device uses electrical fields and ionic conduction mechanisms to detect metal ions, eliminating the need for time-consuming spectroscopic procedures while enabling real-time, in-situ monitoring of metal ion contamination in semiconductor processing solutions.
Solution Approach 2:
The semiconductor device performs self-detection by utilizing its own conductive structures and ionic pathways. The metal ions naturally migrate through the semiconductor device structure under applied voltage, and the device's conductance changes automatically indicate contamination levels, eliminating the need for separate analysis procedures or human intervention.
2Device complexity
If traditional sampling and analysis methods are used, then device complexity is reduced, but reliability decreases due to inability to provide real-time detection and prevent contamination spread
Solution Approach 1:
The semiconductor device serves multiple functions simultaneously: it acts as both a processing tool component and a detection sensor. The same semiconductor structure used in semiconductor manufacturing also functions as the detection element, eliminating the need for separate complex detection systems while providing reliable real-time contamination monitoring.
Solution Approach 2:
The patent merges the semiconductor processing tool with the detection sensor into a single integrated device. The semiconductor structure combines processing functionality with embedded sensing capabilities, allowing simultaneous processing and real-time contamination detection without requiring separate independent systems.
3Loss of time
If metal ion contamination is not detected early, then loss of time is reduced, but object-affected harmful factors increase due to device contamination and equipment degradation
Solution Approach 1:
The semiconductor device performs preliminary detection of metal ion contamination before significant contamination occurs. By continuously monitoring metal ion levels in real-time, the system can detect contamination early in the processing sequence, allowing preventive actions to be taken before contamination spreads to multiple devices or causes equipment degradation.
Solution Approach 2:
The system provides continuous real-time feedback on metal ion contamination levels through conductance measurements. This feedback mechanism allows immediate detection of contamination events and enables rapid response to prevent further contamination spread, creating a closed-loop monitoring system that actively prevents harmful effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables early detection and prevention of metal ion contamination, reducing the risk of device misprocessing and equipment degradation by providing real-time, accurate monitoring and trapping of metal ions in semiconductor processing solutions.
Implementation Method 1
optically illuminating the semiconductor device thereby creating a P/N junction
Implementation Method 2
causing metal ions of the solution to migrate to the at least one contact part
Implementation Method 3
monitoring conductance of a structure of the semiconductor device having a conductance that varies with an amount of metal ions accumulated on the semiconductor device
Data Source
AI summary
A device, apparatus and method for trapping metal ions and detecting metal ion contamination in a solution provide a semiconductor device formed on a semiconductor substrate and including an N-well formed over a P-type substrate and at least a contact portion of the N-well in electrical contact with the solution. When the semiconductor device is optically illuminated, a P/N junction is formed as a result of photovoltaic phenomena. Metal ions from the solution migrate to the contact area due to the voltage created at the P/N junction. The semiconductor device includes a conductive structure with conductive features separated by a gap and therefore in an initially electrically open state. When the ions migrate to the contact area, they precipitate, at least partially bridging the gap and creating conductance through the conductive structure. The conductance may be measured to determine the amount of metal ion contamination.