Semiconductor Metal Layer Structure for Thermal Stress Crack Prevention
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Solution Overview
Problem
Existing semiconductor devices face reliability issues due to thermal stress and increased production costs, particularly because of the need for multiple protective films that can lead to detachment of metallic layers and complex manufacturing processes.
Innovation Solution
A semiconductor device design featuring a semiconductor substrate with a first metallic layer, a second metallic layer, and a protective film made of resin material, where the second metallic layer is interposed between the first metallic layer and the protective film, enhancing adhesion and reducing the need for additional protective films, thereby simplifying the production process and improving reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a first protective film and a second protective film are provided to prevent cracks due to thermal stress, then reliability is improved, but device complexity and production cost increase
Solution Approach 1:
The invention extracts and removes the first protective film from the structure, retaining only the second protective film. The second protective film is designed to cover both the end portion of the oxidation barrier layer and the end portion of the first protective film region, eliminating the need for a separate first protective film while maintaining crack prevention functionality.
Solution Approach 2:
The second protective film serves multiple functions: it protects the oxidation barrier layer from thermal stress-induced cracks and simultaneously covers the region where the first protective film would have been. This multi-functional design reduces the total number of protective films required.
2Reliability
If two protective films are provided, then crack prevention is improved, but manufacturing process becomes more complex
Solution Approach 1:
The invention extracts and eliminates the first protective film from the manufacturing process, simplifying the production steps while maintaining crack prevention functionality through the optimized second protective film design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the adhesion between metallic layers, reduces the occurrence of cracks due to thermal stress, and lowers production costs by eliminating the need for additional protective films, thereby improving the reliability and cost-effectiveness of the semiconductor device.
Implementation Method 1
the protective film is in contact with the second metallic layer, and is made of a resin material
Implementation Method 2
the semiconductor device has a risk that the second metallic layer may detach from the first metallic layer due to thermal expansion of the first protective film
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate; a first metallic layer provided over the semiconductor substrate; a second metallic layer provided on the first metallic layer; and a protective film including an opening, the protective film being provided on the second metallic layer, in which the protective film is in contact with the second metallic layer, and is made of a resin material, the first metallic layer and the second metallic layer are each provided across a region that includes the opening in plan view, and the second metallic layer has a part interposed between the first metallic layer and the protective film.