Antenna Formation in Semiconductor Metal Layers

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Solution Overview

Problem

The integration of millimeter wave antennas into compact mobile devices is challenging due to limited space on printed circuit boards, leading to larger and less mobile devices, as the density of components increases, making it difficult to incorporate efficient millimeter wave communication systems.

Innovation Solution

The integration of antennas within the metal layers or redistribution layers of semiconductor devices, allowing for the elimination of additional antenna structures on printed circuit boards and enabling efficient millimeter wave communication without increasing device size.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If antennas are deposited on a printed circuit board within a mobile device, then millimeter wave communication functionality is achieved, but the area occupied by antennas increases device size and reduces mobility

Engineering Contradiction:
Improvemillimeter wave communication functionalityVSAvoidarea occupied by antenna
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges the antenna structure with existing semiconductor device layers by forming antennas within metal layers or redistribution layers that are already part of the semiconductor device architecture. This integration eliminates the need for separate PCB-mounted antennas, combining multiple functions into unified structures.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent transitions antenna placement from a two-dimensional PCB surface to a three-dimensional integration within semiconductor device layers. By utilizing vertical stacking and internal layer structures, the antenna functionality is achieved without increasing the device's footprint area.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Productivity

If the density of devices attached to the PCB increases, then component integration is improved, but the area available for antennas decreases

Engineering Contradiction:
Improvecomponent integration densityVSAvoidarea available for antenna
Core Design Contradiction:
ProductivityVSArea of stationary object

Solution Approach 1:

The antenna structures are merged with the semiconductor device's existing metal interconnect layers and redistribution layers. This integration allows antennas to share the same physical space and manufacturing processes as other device components, eliminating the need for separate antenna real estate on the PCB.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The metal layers and redistribution layers in the semiconductor device serve multiple functions: they provide electrical interconnects for high-density component attachment and simultaneously function as antenna elements for millimeter wave communication. This multi-functionality resolves the conflict between integration density and antenna space.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Reliability

If additional antenna structures are added to meet millimeter wave communication demands, then communication performance is improved, but device complexity and size increase

Engineering Contradiction:
Improvemillimeter wave communication performanceVSAvoidantenna structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines antenna functionality with existing semiconductor device structures by forming antennas within metal layers and redistribution layers. This merging approach eliminates the need for additional separate antenna structures, maintaining device simplicity while achieving millimeter wave communication performance.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS10847479B2Antenna formation by integrated metal layer or redistribution layer
Publication Date: 2020.11.24 MICRON TECHNOLOGY INC
  • US10847479B2 patent drawing
  • US10847479B2 patent drawing
  • US10847479B2 patent drawing

AI summary

Systems and methods of manufacture are disclosed for a semiconductor device having an integral antenna. The semiconductor device includes a substrate having a plurality of metal layers within the substrate with the plurality of metal layers being adjacent to an active side of the substrate. An antenna structure is formed on one of metal layers. The antenna structure may be configured to be connected to an external device. The substrate may include a redistribution layer connected to the active side of the substrate. The antenna structure may be formed in the redistribution layer instead of being formed on one of the metal layers. The area of the antenna structure may be configured to enable a device connected to the antenna structure to operate on a communication network. The antenna structure may be configured to be a 5G network antenna.