Semiconductor Metal Layer Patterning to Prevent Short Circuits
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Solution Overview
Problem
The formation of metal conductive layers in semiconductor devices often results in by-products that cause short circuits between adjacent layers, necessitating a new process to reduce these defects.
Innovation Solution
A method involving the use of an oxygen source gas for etching and ashing processes to form a semiconductor structure, followed by an alkaline corrosion solution to remove by-products, including metal oxides, and forming an isolation structure between metal conductive layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to form metal conductive layers, then the metal conductive layer can be formed, but by-products remain on the layer causing short circuits between adjacent layers
Solution Approach 1:
The patent changes the chemical parameters of the etching process by using oxygen source gas instead of conventional etching gases. This parameter change transforms the by-products into metal oxides that can be effectively removed by alkaline corrosion solution, thereby eliminating the short circuit problem while maintaining the metal conductive layer formation
Solution Approach 2:
The patent converts the harmful by-products generated during etching into metal oxides through the use of oxygen source gas. These metal oxide by-products are then easily removable by alkaline corrosion solution, transforming the original harmful effect into a beneficial outcome where the by-products become easily eliminatable residues that improve rather than harm the final product quality
2Ease of manufacture
If multiple separate processes are used to remove different by-products, then complete cleaning can be achieved, but the process flow becomes complex
Solution Approach 1:
The patent merges the removal of sacrifice layer and by-products into a single alkaline corrosion step. By designing the process so that both the sacrifice layer and etching by-products are converted to metal oxides, a single alkaline corrosion solution can remove both simultaneously, eliminating the need for multiple separate cleaning processes and simplifying the overall manufacturing flow
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively removes by-products as metal oxides, simplifies the process flow, and reduces short circuits between metal conductive layers, improving the yield of semiconductor structures.
Implementation Method 1
forming a metal conductive layer and a sacrifice layer atop the metal conductive layer by etching the initial sacrifice layer and the initial metal conductive layer using an oxygen source gas as an etching gas
Implementation Method 2
removing the patterned mask layer by performing an ashing process using the oxygen source gas as the etching gas
Implementation Method 3
removing the sacrifice layer as well as by-products including the first by-product formed during the etching and the second by-product formed during the ashing process and exposing the metal conductive layer by performing a corrosion process using an alkaline corrosion solution
Data Source
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AI summary
Embodiments of the present disclosure provide a semiconductor structure and a method for forming a semiconductor structure. The method includes: providing a substrate, wherein an insulation layer, an initial metal conductive layer, an initial sacrifice layer, and a mask layer stacking in sequence are formed on the substrate, wherein the initial sacrifice layer includes a metal oxide layer; forming a metal conductive layer and a sacrifice layer atop the metal conductive layer by etching the initial sacrifice layer and the initial metal conductive layer using an oxygen source gas as an etching gas based on a patterned mask layer; removing the patterned mask layer by performing an ashing process using the oxygen source gas as the etching gas; removing the sacrifice layer as well as a by-product formed during the etching and the ashing process and exposing the metal conductive layer by performing a corrosion process using an alkaline corrosion solution; and forming an isolation structure between adjacent metal conductive layers.