Semiconductor Metal Pattern Fuse for Overcurrent Protection
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Solution Overview
Problem
Conventional power semiconductor apparatuses face issues with overcurrent damage causing short circuits between the collector and emitter of IGBTs, leading to insulation failure and adverse effects on external elements, and existing solutions like using wiring as a fuse increase module size and complexity.
Innovation Solution
A semiconductor apparatus design featuring a lead frame with a first semiconductor element, a second semiconductor element connected in parallel, and a metal pattern on the second element, where the metal pattern acts as a fuse with higher resistance paths to disconnect and contain overcurrent damage, preventing it from reaching external elements without increasing module size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wiring in a module is used as a fuse to prevent overcurrent damage, then overcurrent protection is achieved, but the size of the module increases and the production process becomes more complex
Solution Approach 1:
The patent merges the fuse function with the existing semiconductor chip structure by forming a metal pattern directly on the chip surface. This integration eliminates the need for separate fuse components or modified wiring structures, achieving overcurrent protection without increasing module size or production complexity
Solution Approach 2:
The semiconductor chip serves multiple functions: it performs its primary semiconductor operation and simultaneously acts as a fuse through the metal pattern. This multi-functionality allows the same component to provide both computational/power handling capabilities and overcurrent protection, avoiding additional size increases
2Reliability
If wiring in a module is used as a fuse to prevent overcurrent damage, then overcurrent protection is achieved, but the production process becomes more complex
Solution Approach 1:
The fuse structure is merged with the semiconductor chip fabrication process itself. The metal pattern is formed during standard chip manufacturing steps, integrating the protective function into the base production流程 without requiring separate fuse assembly or additional production stages
Solution Approach 2:
The semiconductor chip structure itself provides the fuse function through its inherent metal interconnect layers. The chip's own structural elements serve the dual purpose of electrical connection and overcurrent protection, eliminating the need for external fuse components and simplifying the production process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively contains overcurrent damage within the metal pattern of the second semiconductor element, preventing adverse effects on external components and avoiding the need for additional terminal members, thus maintaining module size and complexity.
Implementation Method 1
A first electrically conductive path formed between the first connection and the second connection has a larger electric resistance than an electric resistance of a second electrically conductive path formed between he second connection and the first terminal portion
Data Source
AI summary
A semiconductor apparatus includes a first semiconductor element, a second semiconductor element, and a metal pattern formed on the second semiconductor element. The metal pattern includes a first connection connected to the first semiconductor element and a second connection connected to a first terminal portion of the first semiconductor element and positioned away from the first connection. A first electrically conductive path formed between the first and second connections has a larger electric resistance than an electric resistance of a second electrically conductive path formed between the second connection and the first terminal portion.