Semiconductor Device Metal Pattern Layout for Corrosion Prevention
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Solution Overview
Problem
Existing semiconductor devices face challenges in efficiently electrically connecting the impurity regions of PMOS FETs to N-well tap regions, leading to potential electrical defects such as anodic corrosion and incomplete contact plug filling.
Innovation Solution
The semiconductor device incorporates a specific layout and manufacturing process for the PMOS FET and N-well tap regions, where metal patterns do not directly connect between the impurity regions of the PMOS FET and the N-well tap region, thereby avoiding anodic corrosion and ensuring complete contact plug filling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If metal patterns directly connect between impurity regions of PMOS FET and N-well tap region, then electrical connection is achieved, but anodic corrosion occurs and contact plug filling becomes incomplete
Solution Approach 1:
The patent introduces an intermediary structure (insulating film or specific wiring configuration) between the metal pattern and the N-well tap region to prevent direct contact. This intermediary layer blocks the electrochemical reaction that causes anodic corrosion while still allowing electrical connection through alternative paths, thus resolving the contradiction between achieving electrical connection and preventing corrosion.
Solution Approach 2:
The patent segments the direct metal-to-semiconductor connection into separate components by introducing intermediate layers or structures. The connection path is divided into multiple stages with insulating films or barrier layers that prevent direct contact between dissimilar materials, thereby eliminating the galvanic couple that causes anodic corrosion while maintaining electrical functionality.
2Reliability
If metal patterns directly connect between impurity regions of PMOS FET and N-well tap region, then electrical connection is achieved, but contact plug filling becomes incomplete
Solution Approach 1:
The patent applies preliminary protective measures during the manufacturing process, such as forming insulating films or barrier layers before metal deposition. This preliminary action prevents direct contact between metal patterns and N-well regions, ensuring complete contact plug filling by preventing electrochemical etching that would otherwise create voids or incomplete filling during subsequent processing steps.
3Reliability
If specific layout and manufacturing process are used to prevent anodic corrosion, then electrical defects are reduced, but device complexity increases
Solution Approach 1:
The patent employs universal design elements such as standard insulating films and common wiring configurations that serve multiple functions: they provide electrical isolation, prevent anodic corrosion, and ensure complete contact plug filling. By using multi-functional structures that are already part of standard semiconductor manufacturing processes, the solution achieves defect reduction without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces electrical defects and ensures desired electrical characteristics by preventing anodic corrosion and ensuring complete contact plug formation, thereby enhancing the reliability and performance of the semiconductor device.
Implementation Method 1
an N-well tap region doped with N-type impurities in the N-well tap forming region
Data Source
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AI summary
A semiconductor device including: a substrate including a PMOS region, an N-well tap forming region, and a boundary region; PMOS field effect transistors on the PMOS region; an N-well tap region doped with N-type impurities in the N-well tap forming region; a first metal pattern connected to at least one impurity region of the PMOS field effect transistors, wherein the first metal pattern extends so that an end of the first metal pattern is positioned on the boundary region; a second metal pattern electrically connected to the N-well tap region, wherein the second metal pattern extends so that an end of the second metal pattern is positioned on the boundary region; a first contact plug on the first metal pattern; a second contact plug on the second metal pattern; and an upper wiring on the first and second contact plugs.