Semiconductor Temperature Measurement via Metal Layer Resistivity
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Solution Overview
Problem
Conventional temperature measuring devices in semiconductor manufacturing are limited in their ability to provide precise temperature control and measurement, especially in vacuum processing environments, leading to potential production defects due to slight excursions out of acceptable process control tolerances.
Innovation Solution
A temperature measuring device featuring a substrate with a stack of metal layers, where a first metal layer with lower electrical resistivity is sandwiched between two layers of higher resistivity materials, allowing for temperature measurement through resistivity changes caused by atomic diffusion, enabling accurate temperature profiling across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional temperature measuring devices (pyrometers or substrates with on-board electronic sensors) are used, then temperature information can be obtained, but the devices are limited to certain processes or require installed hardware
Solution Approach 1:
The patent uses a dummy substrate that replicates the thermal properties and geometry of the actual workpiece without requiring any special sensors or hardware modifications. This copy approach allows the same measurement methodology to be applied across different process types (CVD, PECVD, sputtering, etc.) and substrate geometries, achieving universal adaptability while maintaining simple implementation
Solution Approach 2:
The metal layer stack structure serves multiple functions: it acts as both the process substrate and the temperature sensing element. The same structure that would normally be present in any semiconductor substrate also provides temperature measurement capability through resistivity changes, eliminating the need for separate sensing hardware and enabling universal application across different vacuum processing processes
2Measurement precision
If precise temperature control is implemented using conventional methods, then manufacturing quality can be maintained, but the cost and complexity of the measuring device increases
Solution Approach 1:
The substrate itself provides the temperature measurement function through its inherent metal layer resistivity changes. The dummy substrate with metal layer stack serves as both the process placeholder and the temperature sensor, eliminating the need for external sensing devices. This self-service approach achieves precise temperature measurement while keeping the device structure simple and cost-effective
Solution Approach 2:
The patent measures temperature by detecting changes in electrical resistivity of the metal layer stack as a function of temperature. By monitoring the resistivity parameter of the existing metal layers (without adding complex sensing hardware), the system achieves accurate temperature measurement through a simple electrical measurement approach
3Reliability
If temperature measurement is performed using existing substrates with on-board sensors, then temperature data can be collected, but the method requires installed hardware and is limited to certain processes
Solution Approach 1:
The dummy substrate replicates the essential thermal and geometric characteristics of actual workpieces without requiring process-specific modifications. This universal copy can be used across different vacuum processing processes (CVD, PECVD, sputtering, annealing, etc.) and different substrate shapes, achieving high reliability temperature measurement while maintaining broad process applicability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides a cost-effective, easy-to-prepare method for measuring temperatures in semiconductor processes, identifying hot or cold spots and improving process control, thereby reducing defects and enhancing manufacturing yield and throughput.
Implementation Method 1
resistivity changes caused by atomic diffusion
Implementation Method 2
measuring a sheet resistivity of the first temperature measuring device
Data Source
AI summary
Implementations described herein generally relate to semiconductor manufacturing, and more specifically to a temperature measurement device. In one implementation, the temperature measurement device includes a substrate and a stack of metal layers coupled to the substrate. Each metal layer of the stack of metal layers extends continuously uninterrupted from edge to edge of the substrate. The first metal layer has a lower electrical resistivity than the second metal layers. The electrical resistivity of the stack is based on the electrical resistivity of the first metal layer, which is temperature dependent. Utilizing a known relationship between temperature measurements and resistivity measurements, the temperature measurement device can measure and store temperature information in various substrate processing processes.