Semiconductor Device Structure Formation via Metal Semiconductor Compound
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable devices at increasingly smaller sizes due to the difficulty in scaling down feature sizes, which complicates fabrication processes and affects production efficiency and cost.
Innovation Solution
A semiconductor device structure formation process involving multiple layers and deposition techniques, including photolithography, self-aligned processes, and chemical vapor deposition, is used to create fin structures, gate dielectric layers, stressors, and metal semiconductor compound layers, enhancing device performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes are decreased to increase functional density, then production efficiency and cost are improved, but fabrication process difficulty increases
Solution Approach 1:
The fabrication process is divided into multiple sequential steps including forming mandrels, depositing first metal layers, forming second metal layers, and creating conductive structures. Each step builds upon the previous one, allowing complex features to be constructed through simpler, more controllable sub-processes that maintain manufacturing ease even as feature sizes decrease
Solution Approach 2:
Mandrel structures are formed in advance before the final metal layers are deposited. These preliminary mandrels serve as templates that guide subsequent deposition and patterning steps, enabling precise feature formation at small dimensions while simplifying the overall fabrication process through pre-planned structural guidance
2Area of stationary object
If feature sizes are decreased to increase functional density, then chip area utilization is improved, but manufacturing precision requirements increase
Solution Approach 1:
Different metal layers are deposited with specific local properties - the first metal layer forms metal semiconductor compound layers with doped structures, while the second metal layer forms conductive structures with dielectric materials. Each layer has tailored composition and structure optimized for its specific function, enabling precise control at small feature sizes through localized material properties rather than uniform processing
Solution Approach 2:
The structure employs composite material systems including metal semiconductor compounds, doped semiconductor regions, and dielectric materials in combination. These composite structures provide distinct functional zones within each feature, allowing precise dimensional control through the inherent properties of different materials while maintaining high functional density on the chip
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This process improves the formation of semiconductor devices by enabling more precise control over feature sizes, reducing contact resistance, and enhancing production efficiency, thus addressing the complexity of smaller-scale fabrication.
Implementation Method 1
performing a physical vapor deposition process to deposit a first metal layer over the first doped structure exposed by the through hole
Implementation Method 2
reacting the first metal layer with the first doped structure to form a metal semiconductor compound layer between the first metal layer and the first doped structure
Implementation Method 3
performing a chemical vapor deposition process to deposit a second metal layer in the through hole
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate, a gate structure, a first doped structure, a second doped structure, and a dielectric layer. The method includes forming a through hole in the dielectric layer. The method includes performing a physical vapor deposition process to deposit a first metal layer over the first doped structure exposed by the through hole. The method includes reacting the first metal layer with the first doped structure to form a metal semiconductor compound layer between the first metal layer and the first doped structure. The method includes removing the first metal layer. The method includes performing a chemical vapor deposition process to deposit a second metal layer in the through hole. The method includes forming a conductive structure in the through hole and over the second metal layer.