Semiconductor Housing Metal Shield for Pressure Rupture Containment
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Solution Overview
Problem
Power semiconductor devices are vulnerable to uncontrolled case ruptures due to excessive internal gas pressure during high energy discharge or short-circuit failure modes, which can be hazardous and unpredictable, and existing protective shields made of polymers or ceramics have limitations in preventing pressure increase and maintaining structural integrity.
Innovation Solution
Incorporating a metal explosion shield within the housing that extends between the semiconductor chips and the tubular housing element to block hot gases and debris pathways, using metal materials that do not thermally decompose and can be made thinner than ceramic or plastic shields, thereby reducing internal pressure and protecting the housing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If polymer or ceramic protective shields are used, then housing protection is provided, but internal pressure increases due to thermal decomposition and structural integrity is compromised
Solution Approach 1:
The patent changes the material parameter from polymer/ceramic to metal, which fundamentally alters the thermal and mechanical properties. Metal shields do not undergo thermal decomposition like polymers, preventing pressure increase, while maintaining protective function through high strength and structural integrity under extreme conditions.
Solution Approach 2:
The invention uses metal as a composite material solution that combines multiple desirable properties: high strength, thermal stability, and pressure resistance. The metal shield integrates these functions in a single material, avoiding the weaknesses of polymer (thermal decomposition) and ceramic (brittleness) materials.
2Strength
If ceramic shields are used, then housing protection is provided, but manufacturing complexity and space requirements increase due to thickness constraints
Solution Approach 1:
The patent changes the material parameter from ceramic to metal, which allows for thinner shield designs. Metal materials provide equivalent or superior protective strength at reduced thickness, simplifying the overall device structure and reducing manufacturing complexity compared to thick ceramic shields.
3Stress or pressure
If metal explosion shield is used, then internal pressure is reduced and housing protection is improved, but electrical isolation challenges arise
Solution Approach 1:
The patent divides the metal shield into multiple segmented parts rather than using a single continuous structure. This segmentation creates natural electrical isolation zones while maintaining the mechanical protective function, as the gaps between segments prevent electrical conduction paths while preserving the shield's ability to contain pressure.
Solution Approach 2:
The patent introduces an intermediary material or structure between the metal shield components to ensure electrical isolation. This intermediary element mediates between the conductive metal shield and the requirement for electrical isolation, allowing the metal shield to function mechanically while preventing electrical conduction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The metal explosion shield effectively prevents housing destruction by reflecting debris and pressure waves, maintaining structural integrity and reducing the risk of explosive rupture, while allowing for more space for gas expansion and improved reliability.
Implementation Method 1
The metal explosion shield effectively prevents housing destruction by reflecting debris and pressure waves
Data Source
AI summary
There is provided a semiconductor device 1, comprising: a housing comprising: a first housing electrode 4 and a second housing electrode 5 arranged at opposite sides of the housing, and a tubular housing element 8 arranged between the first and second housing electrodes 4, 5 and configured to electrically isolate the first and second housing electrodes 4, 5 from one another; at least one semiconductor chip 20 arranged within the housing between the first and second housing electrodes 4, 5; and a metal explosion shield 12 arranged within the housing, wherein the metal explosion shield 12 is configured to extend into a space formed between the at least one semiconductor chip 20 and the tubular housing element 8 such that the metal explosion shield surrounds the at least one semiconductor chip 20.