Semiconductor Device Metal Sintered Bonding Thermal Stress Relaxation
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Solution Overview
Problem
Conventional semiconductor devices with power modules experience increased thermal resistance and size due to the use of temporarily sintered Ag layers for bonding metal layers and heat sinks, requiring separate holding units to prevent cracking and peeling, which complicates the structure and increases thermal resistance.
Innovation Solution
A semiconductor device design featuring an insulated substrate with a wiring pattern copper plate and a heat radiation copper plate bonded using a metal sintered material, where the thickness of these copper plates is set to relax thermal stress, eliminating the need for a holding unit and enhancing heat radiation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a temporarily sintered Ag layer is used to bond the metal layer and heat sink, then the bonding process is simplified, but thermal resistance increases and the structure becomes less stable
Solution Approach 1:
The patent changes the bonding parameters by using a metal sintered material with optimized sintering conditions to achieve complete sintering rather than temporary sintering. This complete sintering reduces thermal resistance while maintaining bonding simplicity, resolving the contradiction between ease of manufacture and reliability.
Solution Approach 2:
The patent employs a composite structure consisting of a metal sintered material layer bonded to both the insulated substrate and heat sink. This composite material approach provides both mechanical stability and low thermal resistance, simultaneously improving reliability and thermal performance.
2Reliability
If a holding unit is added to prevent cracking and peeling, then structural stability is improved, but device complexity and overall size increase
Solution Approach 1:
The metal sintered material layer serves dual functions: it provides thermal conduction and simultaneously acts as the bonding structure that prevents cracking and peeling. This self-service approach eliminates the need for a separate holding unit, reducing device complexity while maintaining reliability.
Solution Approach 2:
The patent merges the thermal conduction function and structural support function into a single metal sintered material layer. This layer both conducts heat efficiently and provides mechanical stability, eliminating the need for separate holding components and reducing overall device complexity.
3Reliability
If a holding unit is added to firmly hold the power module and heat sink, then bonding stability is improved, but overall size increases
Solution Approach 1:
The metal sintered material layer provides inherent bonding stability through its sintered structure, eliminating the need for external holding units. This self-service mechanism maintains bonding stability while avoiding the space occupation that would result from additional holding components.
Solution Approach 2:
The use of a metal sintered material creates a composite bonding structure that inherently provides both mechanical strength and thermal conductivity. This composite approach achieves bonding stability without requiring additional holding structures, thereby minimizing device volume.
4Reliability
If completely sintered layer is used instead of temporarily sintered layer, then thermal resistance is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent optimizes sintering parameters including temperature, pressure, and atmosphere to achieve complete sintering with reduced process complexity. By carefully controlling these parameters, the manufacturing process remains simple while achieving the desired complete sintering state that reduces thermal resistance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces thermal resistance, prevents cracking and peeling, and minimizes the overall structure while maintaining effective heat radiation, thereby improving the thermal management and reliability of semiconductor devices.
Implementation Method 1
The heat radiation copper plate unit of the insulated substrate and the cooling body are bonded with a metal sintered material
Implementation Method 2
a wiring pattern copper plate unit for forming wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit is disposed on the other side of the insulating plate unit
Implementation Method 3
thickness of the wiring pattern copper plate unit and thickness of the heat radiation copper plate unit are set to thickness at which thermal stress is relaxed
Data Source
AI summary
In a semiconductor device, an insulated substrate is bonded with a cooling body with lowered thermal resistance without a holding unit. The semiconductor device includes an insulated substrate where a wiring pattern copper plate unit for forming a plurality of wiring patterns is disposed on one side of an insulating plate unit, and a heat radiation copper plate unit disposed on the other side of the insulating plate unit; a semiconductor chip mounted on the wiring pattern copper plate unit; a cooling body contacted with the heat radiation copper plate unit; and a wiring conductor plate connected between the semiconductor chip and the wiring pattern copper plate unit. The heat radiation copper plate unit and the cooling body are bonded with a metal sintered material, and thicknesses of the wiring pattern copper plate unit and the heat radiation copper plate unit are set to such thermal stress is relaxed.