Semiconductor Metal Stack Layout for Insulating Layer Adhesion
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Solution Overview
Problem
In semiconductor devices, the insulating layer for surface protection often peels off, leading to deterioration of electrical characteristics due to moisture ingress.
Innovation Solution
A semiconductor device design featuring a first metal layer with a separated region on its upper surface, where the second insulating layer is in direct contact with both the side and upper surfaces of the first and second metal layers, enhancing adhesion and preventing peeling. This design includes specific metal layers like titanium, titanium tungsten alloy, and silicon nitride for improved adhesion and moisture protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the insulating layer is formed to cover the metal layers for surface protection, then the electrical characteristics are protected, but the insulating layer peels off due to insufficient adhesion
Solution Approach 1:
The upper surface of the first metal layer is divided into a first region (in contact with second metal layer) and a second region (separated from second metal layer). The second insulating layer contacts both the side surface and the second region, creating multiple adhesion pathways that prevent peeling while maintaining electrical protection.
Solution Approach 2:
The second insulating layer is configured to contact not only the upper surface but also the side surface of the metal layers. This three-dimensional contact configuration increases the adhesion area and prevents peeling by distributing stress across multiple surfaces rather than relying solely on planar adhesion.
2Object-affected harmful factors
If the insulating layer is made to cover the metal layers completely, then moisture protection is improved, but peeling occurs due to poor adhesion allowing moisture ingress
Solution Approach 1:
By segmenting the metal layer surface into contact and separated regions, the insulating layer achieves both complete coverage for moisture protection and enhanced adhesion through contact with the second region and side surfaces, preventing the peeling that would otherwise allow moisture ingress.
Solution Approach 2:
The second region of the first metal layer acts as an intermediary contact point between the second insulating layer and the metal structure, providing additional adhesion support that prevents peeling while maintaining the protective barrier against moisture.
3Reliability
If the width of the first metal layer is made greater than or equal to the second metal layer, then adhesion area is increased, but manufacturing precision requirements increase
Solution Approach 1:
The first metal layer has different functional regions: the first region provides electrical contact with the second metal layer, while the second region provides adhesion contact with the second insulating layer. This local differentiation allows the width to be optimized for adhesion without compromising electrical function, reducing manufacturing precision requirements.
Data Source
AI summary
A semiconductor device includes a substrate; a first insulating layer provided on the substrate; a first metal layer provided on the first insulating layer; a second metal layer provided on the first metal layer; and a second insulating layer covering the first metal layer and the second metal layer. An upper surface of the first metal layer has a first region that is in contact with the second metal layer, and a second region that is separated from the second metal layer. The second insulating layer is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer. A width of the first metal layer is greater than or equal to a width of the second metal layer in a direction parallel to the substrate.