Cleaning Agent for Semiconductor Metal Wiring
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Solution Overview
Problem
Current post-CMP cleaning agents for microelectronic devices with metal wiring, such as tungsten or copper, either corrode the wiring or fail to effectively remove residues like abrasive grains and metallic ions, posing challenges for modern devices with fine patterns.
Innovation Solution
A cleaning agent comprising organic amines, quaternary ammonium hydroxides, chelating agents, and specific pH levels is developed to remove abrasive grains and metallic residues without corroding tungsten or copper wiring, utilizing compositions like TMAH, TEP, EDTA, and water for tungsten, and cyclic polyamines, polyphenol reducing agents, and ascorbic acid for copper.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If acidic cleaning agents containing organic acid (citric acid, oxalic acid) are used for tungsten CMP, then the ability to remove metallic residues is improved, but the wiring metal is substantially corroded
Solution Approach 1:
The patent changes the pH parameter from acidic to neutral or alkaline range, and modifies the chemical composition by adding specific components (ammonium hydroxide, hydrogen peroxide, and surfactants) to create a cleaning solution that maintains effectiveness while reducing corrosivity to tungsten wiring
Solution Approach 2:
The patent creates a composite cleaning solution by combining multiple components (ammonium hydroxide, hydrogen peroxide, surfactants, and chelating agents) that work synergistically to remove residues while protecting the tungsten wiring from corrosion
2Manufacturing precision
If hydrochloric acid and hydrogen peroxide aqueous solution is used for post-CMP cleaning, then the ability to remove polishing particulates is improved, but the wiring metal is substantially corroded
Solution Approach 1:
The patent changes the pH parameter from strongly acidic to neutral or alkaline, and replaces hydrochloric acid with ammonium hydroxide-based systems that provide equivalent cleaning capability without the corrosive effects on metal wiring
Solution Approach 2:
The patent introduces surfactants and chelating agents as intermediary substances that facilitate the removal of polishing particulates and metallic residues through surface activity and complex formation, rather than relying on direct acidic attack on the metal
3Object-affected harmful factors
If alkaline cleaning agents containing alkanolamine are used for copper CMP, then the corrosivity to copper wiring is reduced and organic residues are removed, but the ability to remove metallic residues is poor
Solution Approach 1:
The patent creates a composite cleaning solution by combining multiple components (ammonium hydroxide, hydrogen peroxide, surfactants, and chelating agents) that work synergistically to remove residues while protecting the tungsten wiring from corrosion
Solution Approach 2:
The patent optimizes the pH parameter and chemical composition by adding specific components (ammonium hydroxide, hydrogen peroxide, and surfactants) to create a cleaning solution that maintains effectiveness while reducing corrosivity to tungsten wiring
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning agents effectively remove residues and abrasive grains while maintaining anticorrosiveness to the metal wiring, ensuring good contact resistance and preventing shorting, thus enabling the production of high-performance microelectronic devices.
Implementation Method 1
said cleaning agent contains an organic amine (A), a quaternary ammonium hydroxide (B), a chelating agent (C), and water (W), and has a pH of 7.0 to 14.0
Implementation Method 2
said cleaning agent contains an organic amine (A), a quaternary ammonium hydroxide (B), a chelating agent (C), and water (W)
Implementation Method 3
utilizing compositions like TMAH, TEP, EDTA, and ascorbic acid for effective cleaning
Data Source
AI summary
A cleaning agent for a microelectronic device provided with metal wiring, which has an excellent ability to remove polishing particle residues derived from a polishing agent and an excellent ability to remove metallic residues on an insulating film, and has excellent anticorrosiveness to the metal wiring. The cleaning agent is used at a step subsequent to chemical mechanical polishing in a manufacturing process of a microelectronic device in which a metal wiring, e.g., copper or tungsten, is formed.