Segmented Inter-Metal Dielectric Layers for Semiconductor Wiring
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The conventional process of forming metal wiring in semiconductor devices requires a large number of processes due to the significant thickness difference between inter-metal dielectric layers in low voltage and high voltage regions, leading to increased processing costs and reduced efficiency.
Innovation Solution
A metal wiring structure for semiconductor devices that includes a high-voltage isolator region with multiple inter-metal dielectric layers and etching stop layers, where contact plugs in adjacent layers crisscross or contact each other at right angles, allowing for electrical connection between metal layers without additional metal layers, and utilizing materials like tungsten or copper for the contact plugs and metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional metal wiring processes are used with thick inter-metal dielectric layers in low voltage regions and thin oxide films in high voltage regions, then proper insulation is achieved in both regions, but the number of processes increases and processing efficiency decreases
Solution Approach 1:
The inter-metal dielectric layer is segmented into multiple sub-layers (first inter-metal dielectric layer, second inter-metal dielectric layer, third inter-metal dielectric layer) with different thicknesses in different regions. The first layer has greater thickness in the low voltage region while the third layer has greater thickness in the high voltage region, allowing each segment to be optimized for its specific functional requirement without compromising overall processing efficiency.
2Reliability
If multiple metal layers and contact plugs are formed to achieve electrical connectivity, then proper electrical connections are established, but the number of manufacturing processes increases and costs increase
Solution Approach 1:
The patent merges the functions of multiple separate metal layers and contact plugs into a single integrated metal wiring structure. The metal wiring directly penetrates through the segmented inter-metal dielectric layers to establish electrical connections, eliminating the need for separate VIA holes and contact plug formation processes, thereby reducing manufacturing complexity while maintaining electrical connectivity.
Data Source
AI summary
A metal wiring for applying a voltage to a semiconductor component of a semiconductor device, the semiconductor device comprising a low voltage applying region adjacent to a high voltage applying region, is provide. The metal wiring includes: an isolator region, a first lower metal layer electrically connected to the semiconductor component, a first upper metal layer configured to be electrically connected to an external power supply, and a plurality of inter-metal dielectric layers deposited between the first lower metal layer and the first upper metal layer, each of the plurality of inter-metal dielectric layers comprising at least one contact plug for providing an electrical connection between the first lower metal layer and the first upper metal layer.