Semiconductor Control Parameter Correction via Metrology Interpretation

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Solution Overview

Problem

Current semiconductor manufacturing processes face challenges in accurately interpreting metrology data for correcting control parameters, leading to potential overcorrection or failure to address real drifts and jumps in the process, due to the inability to distinguish between actual product feature drifts and metrology tool or target imperfections.

Innovation Solution

The method involves obtaining metrology data and associated data that provides context for interpreting the metrology data, allowing for the determination of corrections based on the degree to which trends or events in the metrology data should be corrected, using techniques such as Exponentially Weighted Moving Average (EWMA) or neural networks to improve control parameter adjustments.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If tight control loops are used to improve pattern reproduction at low k1, then manufacturing precision is improved, but the complexity of the control system increases

Engineering Contradiction:
Improvepattern reproduction accuracyVSAvoidcontrol system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces an intermediary interpretation layer that sits between metrology data collection and correction application. This layer analyzes whether observed drifts or jumps in metrology data represent actual process deviations requiring correction or merely measurement artifacts. By adding this intermediary analysis step, the system avoids both overcorrection (correcting false signals) and undercorrection (missing real issues), thereby improving manufacturing precision without proportionally increasing control system complexity

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent implements a refined feedback mechanism where metrology data is continuously monitored, interpreted, and used to adjust control parameters. The feedback loop includes an interpretation stage that determines whether corrections should be applied based on the nature of the observed deviations. This selective feedback approach improves pattern reproduction by ensuring corrections are only made when truly necessary, while avoiding the complexity of continuously adjusting all control parameters

Inventive Principle:
Principle #23Feedback

2Manufacturing precision

If corrections are applied based on all metrology data trends, then manufacturing precision may improve, but the risk of overcorrection increases due to false drifts and jumps

Engineering Contradiction:
Improveprocess correction accuracyVSAvoidcorrection reliability
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent applies preliminary action by interpreting and classifying metrology data trends before applying corrections. The system performs preliminary analysis to distinguish between genuine process drifts requiring correction and false signals from measurement artifacts. By conducting this preliminary classification step before correction application, the system improves both manufacturing precision and correction reliability, avoiding overcorrection while maintaining responsiveness to real process deviations

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements partial action by selectively applying corrections only to specific control parameters based on the interpretation of metrology data. Rather than applying uniform corrections across all parameters, the system applies corrections partially and selectively - only when and where they are truly needed based on the nature of the observed deviations. This approach improves reliability by avoiding unnecessary corrections while maintaining precision where corrections are warranted

Inventive Principle:
Principle #16Partial or excessive action

Data Source

PatentUS20240310738A1Method of determining a correction for at least one control parameter in a semiconductor manufacturing process
Publication Date: 2024.09.19 ASML NETHERLANDS BV
  • US20240310738A1 patent drawing
  • US20240310738A1 patent drawing
  • US20240310738A1 patent drawing

AI summary

A method and associated computer program and apparatuses for determining a correction for at least one control parameter, the at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method includes: obtaining metrology data relating to the semiconductor manufacturing process or at least part thereof; obtaining associated data relating to the semiconductor manufacturing process or at least part thereof, the associated data providing information for interpreting the metrology data; and determining the correction based on the metrology data and the associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in the metrology data should be corrected based on the interpretation of the metrology data.