Semiconductor Current-Sensing Circuit With Ultra-Low Off-State Leakage

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Solution Overview

Problem

Existing sensors face challenges in accurately measuring minute currents due to the reduction in sensor size, necessitating improved circuit designs for precise current reading.

Innovation Solution

A semiconductor device incorporating a transistor with a metal oxide in the channel formation region and an operational amplifier, with an off-state current less than or equal to 1.0×10−12 A, capable of measuring minute currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If sensor size is reduced, then device miniaturization is achieved, but current output becomes minute and measurement accuracy deteriorates

Engineering Contradiction:
Improvesensor sizeVSAvoidcurrent measurement accuracy
Core Design Contradiction:
Volume of moving objectVSMeasurement precision

Solution Approach 1:

The patent changes the electrical parameters of the transistor by using metal oxide semiconductor material with specific properties (low off-state current, adjustable threshold voltage) to enable accurate measurement of minute currents while maintaining miniaturized sensor size

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material structure combining metal oxide semiconductor in the channel region with silicon-based operational amplifier, creating a hybrid device that leverages the low leakage current property of metal oxide for precise minute current measurement

Inventive Principle:
Principle #40Composite materials

2Device complexity

If conventional transistors are used, then device simplicity is maintained, but off-state current is too high for minute current measurement

Engineering Contradiction:
Improvetransistor structure simplicityVSAvoidcurrent measurement reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent modifies the transistor's material composition parameter by replacing conventional silicon channel with metal oxide semiconductor channel, fundamentally changing the electrical characteristics to achieve ultra-low off-state current while keeping the basic transistor structure intact

Inventive Principle:
Principle #35Parameter changes

3Device complexity

If threshold voltage is not controlled, then device simplicity is maintained, but measurement stability at varying temperatures deteriorates

Engineering Contradiction:
Improvevoltage control circuit complexityVSAvoidmeasurement stability
Core Design Contradiction:
Device complexityVSStability of the object's composition

Solution Approach 1:

The patent implements feedback control by connecting the operational amplifier's output to its inverting input, creating a negative feedback loop that stabilizes the threshold voltage and compensates for temperature variations, ensuring measurement stability

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The operational amplifier serves multiple functions: it provides threshold voltage control, temperature compensation, and current-to-voltage conversion, reducing the need for separate dedicated circuits and maintaining device simplicity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Data Source

PatentUS12408383B2Semiconductor device, semiconductor wafer, and electronic device
Publication Date: 2025.09.02 SEMICON ENERGY LAB CO LTD
  • US12408383B2 patent drawing
  • US12408383B2 patent drawing
  • US12408383B2 patent drawing

AI summary

A semiconductor device capable of measuring a minute current is provided. The semiconductor device includes an operational amplifier and a diode element. An inverting input terminal of the operational amplifier and an input terminal of the diode element are electrically connected to a first terminal to which current is input, and an output terminal of the operational amplifier and an output terminal of the diode element are electrically connected to a second terminal from which voltage is output. A diode-connected transistor that includes a metal oxide in a channel formation region is used as the diode element. Since the off-state current of the transistor is extremely low, a minute current can flow between the first terminal and the second terminal. Thus, when voltage is output from the second terminal, a minute current that flows through the first terminal can be estimated from the voltage.