Semiconductor Device Mixed Unit Cell Switching Speed
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Solution Overview
Problem
Semiconductor devices with field effect transistors face challenges in shortening switching descent time while maintaining low power consumption, as existing designs often compromise on either performance or efficiency.
Innovation Solution
The semiconductor device incorporates a mixed structure of first and second unit cells, where the first unit cell has a low on-resistance component with high feedback capacitance, and the second unit cell has a higher on-resistance component with lower feedback capacitance, arranged in parallel to optimize on-resistance and feedback capacitance ratios, allowing for reduced switching descent time without significant increases in power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a field effect transistor with a plurality of unit cells is designed to shorten switching descent time, then switching speed is improved, but power consumption increases
Solution Approach 1:
The field effect transistor is divided into a plurality of unit cells (first unit cells and second unit cells) with different on-resistance and feedback capacitance characteristics. Each unit cell type contributes differently to the overall performance, allowing independent optimization of switching speed and power consumption characteristics through the combined effect of multiple segmented units.
Solution Approach 2:
Different unit cells are assigned different electrical characteristics (on-resistance and feedback capacitance values) to perform different functions. The first unit cells provide one set of characteristics while the second unit cells provide another set, creating local quality variations within the device to simultaneously achieve fast switching and low power consumption.
2Loss of time
If the on-resistance is reduced to improve switching performance, then switching descent time is shortened, but power consumption increases
Solution Approach 1:
The transistor channel is segmented into multiple unit cells with different on-resistance values. The first unit cells have one on-resistance value while the second unit cells have a different on-resistance value, allowing the overall device to achieve low effective on-resistance for fast switching while distributing power loss across multiple units with varying characteristics.
Solution Approach 2:
The patent changes the electrical parameters (on-resistance and feedback capacitance) of different unit cells to optimize performance. By having first unit cells with specific parameter values and second unit cells with different parameter values, the device achieves a balance between switching speed and power consumption that cannot be obtained with uniform parameters.
Data Source
AI summary
A semiconductor device includes: a semiconductor chip; and a field effect transistor formed on the semiconductor chip and including a plurality of unit cells, which include at least one first unit cell including a first on-resistance component and a first feedback capacitance component, and at least one second unit cell including a second on-resistance component forming a parallel component with respect to the first on-resistance component and exceeding the first on-resistance component and a second feedback capacitance component forming a parallel component with respect to the first feedback capacitance component and being less than the first feedback capacitance component.