Semiconductor Modified-Layer Processing for Hard Material Machining
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Solution Overview
Problem
The high hardness of semiconductor materials like silicon carbide makes processing procedures such as slicing, grinding, or polishing challenging, leading to wear on processing elements and inefficiencies in semiconductor manufacturing.
Innovation Solution
A processing device and method utilizing a combination of laser and microwave or radio-frequency energy to create qualitative changes or defects in the semiconductor material, generating a modified layer with controlled energy absorption and temperature adjustments, allowing for improved processing efficiency and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional mechanical processing methods (slicing, grinding, polishing) are used on high-hardness semiconductor materials, then processing can be performed, but processing efficiency is low and wear occurs on processing elements
Solution Approach 1:
The patent replaces conventional mechanical processing methods (slicing, grinding, polishing) with a combined laser and microwave processing system. The laser provides localized heating while microwave energy modifies the material structure, enabling non-mechanical material removal and processing that eliminates wear on processing elements while improving processing efficiency
Solution Approach 2:
The patent changes the physical and chemical parameters of the semiconductor material through combined laser heating and microwave irradiation. This creates a modified layer with altered properties that enables easier processing, transforming the material from a hard, difficult-to-process state to a softened, more processable state without mechanical contact
2Manufacturing precision
If laser energy alone is used to modify the solid structure, then localized heating and modification can be achieved, but energy absorption control and processing quality are insufficient
Solution Approach 1:
The patent merges laser energy and microwave energy into a combined processing system. The laser provides localized heating and precise spatial control, while microwave energy penetrates deeper into the material and provides bulk heating and structural modification. This combination synergistically improves energy absorption control and processing quality beyond what either method could achieve alone
Solution Approach 2:
The patent introduces microwave energy as an intermediary that enhances the laser processing effect. The microwave field modifies the material's dielectric properties and promotes uniform energy distribution, acting as a mediator that improves the overall energy absorption and processing quality of the combined system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances processing efficiency by creating stress differences and modifying the material's structure, enabling more effective cutting, slicing, grinding, or polishing with reduced wear on processing tools, and improving the quality of semiconductor components.
Implementation Method 1
a laser source for providing a laser energy to a processing target area of the solid structure in a modification step of a processing procedure
Implementation Method 2
a microwave or radio-frequency source for providing a microwave or radio-frequency energy to the solid structure in the modification step of the processing procedure
Data Source
AI summary
A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.