Semiconductor Device Modulated Doping for High Voltage
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Solution Overview
Problem
High voltage transistors face challenges in achieving improved breakdown voltage and reduced power loss during switching operations, with existing manufacturing methods often being incompatible with established operations.
Innovation Solution
A semiconductor device structure featuring a high voltage transistor with a modulated doping procedure, including a blocking layer and a restriction layer, which are formed on a semiconductor substrate to enhance breakdown voltage and reduce power loss by maintaining a substantially constant voltage across the blocking layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional high voltage transistor structures are used, then the transistor can withstand high drain-to-source voltages, but the breakdown voltage is insufficient and power loss during switching operations increases
Solution Approach 1:
The drift region is segmented into multiple portions with different doping concentrations, creating a modulated doping profile. This segmentation allows different regions to contribute differently to breakdown voltage and switching performance, resolving the contradiction between high breakdown voltage and low switching loss.
Solution Approach 2:
Different portions of the drift region are assigned different doping concentrations tailored to their specific functional requirements. The first portion has a first doping concentration optimized for breakdown voltage, while the second portion has a second doping concentration optimized for switching performance, allowing local optimization of both contradictory requirements.
2Reliability
If various doped regions are formed to achieve desired transistor operation, then the transistor can function as a high voltage device, but manufacturing compatibility with established operations is reduced
Solution Approach 1:
The modulated doping structure serves multiple functions simultaneously: it provides the necessary doping profiles for high voltage operation, creates the required depletion regions, and maintains compatibility with existing manufacturing processes. This multi-functionality resolves the contradiction between achieving high voltage capability and maintaining manufacturing ease.
3Ease of manufacture
If the drift region has uniform doping concentration, then manufacturing is simplified, but breakdown voltage and switching performance are compromised
Solution Approach 1:
The doping concentration parameter is changed across different portions of the drift region, creating a modulated profile. This parameter change enables both improved breakdown voltage and switching performance while maintaining reasonable manufacturing complexity through the use of standard doping techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure effectively improves breakdown voltage and reduces power loss during switching operations by forming a depletion region that isolates the blocking layer from applied voltages, minimizing current flow and capacitive coupling.
Implementation Method 1
forming a depletion region that isolates the blocking layer from applied voltages, minimizing current flow and capacitive coupling
Data Source
AI summary
An embodiment of a semiconductor device may include a transistor having a first doped region and a second doped region that extend laterally underlying the source, body, and drain of the transistor. The transistor may have an embodiment that includes an additional bias contact to apply a bias potential to the first doped region and or alternately the second doped region.