Low Profile Semiconductor Module Asymmetric Component Layer Design
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The challenge is to create a module for information communication terminals with increased component mounting density while maintaining a low profile and minimizing unwanted radiation from semiconductor substrates, which is not effectively addressed by existing technologies.
Innovation Solution
The module mounts components on both main surfaces of a wiring substrate, with a thinner first component layer comprising a semiconductor substrate face-down on one surface and a thicker second component layer with multiple chip components on the other surface, incorporating columnar external connection terminals, including a ground terminal, and using resin layers with different linear expansion coefficients to manage thickness and radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If components are mounted on both main surfaces of the wiring substrate to increase component mounting density, then the functionality of the module is improved, but the profile height of the module increases
Solution Approach 1:
The patent applies asymmetry by making the first component layer (with semiconductor substrate) thinner than the second component layer (with other components). This asymmetric thickness design allows the semiconductor substrate to be positioned closer to the ground terminal, reducing parasitic inductance and electromagnetic radiation while maintaining low profile height. The asymmetric structure optimizes both functionality and profile constraints.
Solution Approach 2:
The patent utilizes the thickness dimension strategically by creating asymmetric thickness between the two component layers. By controlling the thickness of the first component layer to be smaller than the second, the invention transforms the vertical dimension into an optimization parameter for reducing parasitic inductance and electromagnetic radiation, thereby achieving low profile height while maintaining high component mounting density.
2Length of stationary object
If the thickness of the first component layer is reduced to lower the profile, then the profile height is improved, but the electrical connection reliability may deteriorate
Solution Approach 1:
The patent applies parameter changes by optimizing the thickness of the first component layer to a specific range (smaller than the second component layer but not excessively thin). This parameter optimization ensures that the semiconductor substrate remains sufficiently close to the ground terminal to reduce parasitic inductance while maintaining reliable electrical connections. The thickness parameter is carefully controlled to balance profile reduction with connection reliability.
3Object-generated harmful factors
If the semiconductor substrate is positioned closer to the ground terminal to suppress unwanted radiation, then the electromagnetic interference is reduced, but the manufacturing complexity increases
Solution Approach 1:
The patent applies local quality by creating asymmetric thickness specifically in the first component layer where the semiconductor substrate is mounted, while the second component layer maintains its standard thickness. This localized thickness modification targets the specific area where electromagnetic radiation suppression is most critical, rather than uniformly reducing the entire module profile. The local quality approach simplifies manufacturing compared to complete redesign while achieving radiation suppression goals.
Data Source
AI summary
A low profile module is provided that has a high functionality achieved by increasing the component mounting density. In spite of achieving high functionality in a module 100 by respectively mounting components such as a semiconductor substrate 104 and chip components 105 on the two main surfaces 101a and 101b of a wiring substrate 101, the low-profile module 100 can be provided which has a high functionality as a result of increasing its component mounting density by forming a thickness Ha of a first component layer 102 formed by mounting only the semiconductor substrate 104 face down on one main surface 101a of the wiring substrate 101 so as to be smaller than the thickness of a second component layer 103 formed by mounting a plurality of chip components 105 on the other main surface 101b of the wiring substrate 101.