Power Semiconductor Module Bonding Layer for Lower Thermal Resistance
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Solution Overview
Problem
Existing power semiconductor module arrangements face challenges in effectively conducting heat away from semiconductor elements while maintaining low production costs.
Innovation Solution
A power semiconductor module arrangement that omits the second metallization layer and uses a connection layer comprising a sinter paste and an adhesion promoter, such as titanium, chromium, or vanadium, to directly attach the dielectric insulation layer to a base plate, enhancing thermal conductivity and reducing thermal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional substrate structure with two metallization layers is used, then electrical connectivity is ensured, but thermal resistance increases and heat dissipation efficiency decreases
Solution Approach 1:
The patent removes the second metallization layer from the conventional substrate structure, extracting only the essential components needed for the specific application. This simplification reduces thermal resistance and improves heat dissipation while maintaining sufficient electrical connectivity through the remaining first metallization layer and connection layer configuration.
Solution Approach 2:
The substrate is divided into functionally distinct layers: a dielectric insulation layer for electrical isolation, a first metallization layer for electrical connectivity, and a connection layer for mechanical and thermal bonding to the base plate. This segmentation allows each layer to be optimized for its specific function, improving overall thermal management.
2Ease of manufacture
If multiple layers including second metallization layer are used, then electrical connectivity is maintained, but production costs increase
Solution Approach 1:
The second metallization layer is removed as it is determined to be unnecessary for the specific application requirements. This extraction reduces material costs, simplifies the manufacturing process, and decreases production complexity while the remaining layers are configured to provide sufficient electrical connectivity.
3Temperature
If conventional connection methods are used, then substrate attachment is achieved, but thermal conductivity is insufficient
Solution Approach 1:
The connection layer is designed as a composite structure combining a sinter paste layer for strong mechanical bonding and an adhesion promoter layer for enhanced interface bonding. This composite material approach optimizes both mechanical attachment strength and thermal conductivity, enabling efficient heat transfer from the substrate to the base plate.
Solution Approach 2:
Different regions of the connection system are assigned different material properties: the sinter paste provides mechanical strength and thermal conduction, while the adhesion promoter ensures strong bonding at the dielectric-substrate interface. This local optimization of material properties maximizes overall thermal conductivity without requiring complex global restructuring.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation from semiconductor elements to the base plate, reduces overall thermal resistance, and lowers production costs by eliminating the need for the second metallization layer.
Implementation Method 1
the connection layer includes a sinter paste and an adhesion promoter... when the substrate is arranged on the base plate, the connection layer directly adjoins the base plate and a second side of the dielectric insulation layer
Implementation Method 2
enhancing thermal conductivity and reducing thermal resistance... improves heat dissipation from semiconductor elements to the base plate
Data Source
Figure 1~2
Figure 3~5
Figure 6~7
AI summary
A semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer and a metallization layer arranged on a first side of the dielectric insulation layer, a base plate, and a connection layer, wherein the connection layer is arranged between the substrate and the base plate and attaches the substrate to the base plate, the connection layer directly adjoins the base plate and a second side of the dielectric insulation layer, opposite the first side, and the connection layer comprises a sinter paste and an adhesion promoter.