Semiconductor Module Layout for Equal Current Path Lengths
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor modules, the non-uniform current path lengths to external electrodes lead to internal resistance and inductance variations, causing current imbalance among semiconductor elements, which can result in temperature deviations and reduced reliability.
Innovation Solution
The semiconductor module design includes an insulating substrate with a conductive pattern, where each semiconductor element has equal current path lengths to power collecting portions, ensuring uniform internal resistances and inductances, thereby balancing current distribution and reducing temperature deviations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If semiconductor elements are arranged in a line on the metal block, then the device complexity is reduced and manufacturing is simplified, but the current path lengths to the external electrode become non-uniform, causing current imbalance among the semiconductor elements
Solution Approach 1:
The patent applies equipotentiality by designing the connection structure so that all semiconductor elements have equal current path lengths to the external electrode. The metal block and wiring are configured to provide equal electrical distance from each semiconductor element's output electrode to the external electrode, ensuring uniform internal resistance and inductance values across all elements, thus achieving current balance without increasing device complexity
Solution Approach 2:
The patent changes the electrical parameters (current path length, internal resistance, inductance) by optimizing the physical layout and connection geometry. Specifically, the metal block dimensions and wiring traces are designed to equalize the electrical path length from each semiconductor element to the external electrode, transforming the non-uniform electrical characteristics into uniform ones while maintaining the simple linear arrangement
2Ease of manufacture
If semiconductor elements are positioned at different distances from the external electrode, then the manufacturing process is simplified, but the internal resistance and inductance become non-uniform, leading to temperature deviations
Solution Approach 1:
The patent ensures equipotentiality in terms of electrical path length by designing the metal block and connection wires to provide equal electrical distance from each semiconductor element to the external electrode. This equalizes the internal resistance and inductance, ensuring uniform current distribution and heat generation across all elements, thus preventing temperature deviations while maintaining simple manufacturing positioning
Solution Approach 2:
The patent modifies the electrical parameters (resistance, inductance) by adjusting the physical dimensions and geometry of the metal block and wiring connections. The connection path length and cross-sectional area are optimized to compensate for positional differences, ensuring that all semiconductor elements experience identical electrical characteristics despite being at different physical distances from the external electrode
Data Source
AI summary
A semiconductor module includes at least, a conductive pattern on the insulating substrate; a first semiconductor element on the conductive pattern, a second semiconductor element on the conductive pattern, a first power collecting portion connected to a first output electrode of the first semiconductor element with a first line; and a second power collecting portion connected to a second output electrode of the second semiconductor element with a second line. Each of the first and second semiconductor elements includes both a switching element and a diode. The conductive pattern is provided between the first power collecting portion and the second power collecting portion. A current path length from a first output electrode of the first semiconductor element to the first power collecting portion and a current path length from a second output electrode of the second semiconductor element to the second power collecting portion are equal to each other.