Semiconductor Module Dummy Metal Film for Thermal Stress Peeling
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Solution Overview
Problem
Semiconductor modules, particularly those made of silicon carbide, experience significant peeling and deformation issues due to thermal stress, leading to potential short circuits and insulation failures between metal films and the semiconductor substrate, especially at the outer peripheral regions.
Innovation Solution
Incorporating a dummy metal film with varying hardness, positioned between the semiconductor substrate and the protective film, which acts as a barrier to prevent peeling progression by being located in recesses and holes on both the substrate and protective film surfaces, and can also function as signal wiring to minimize thermal stress-induced deformation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal film is provided on the semiconductor substrate adjacent to the protection film, then electrical connection and signal transmission are achieved, but thermal stress causes peeling and deformation at the outer peripheral regions
Solution Approach 1:
A dummy metal film is introduced as an intermediary element between the protection film and the main metal film. This dummy metal film absorbs thermal stress and prevents direct stress transmission to the main metal film, thereby preventing peeling and deformation while maintaining electrical connection and signal transmission functions.
Solution Approach 2:
The dummy metal film is strategically positioned at the outer peripheral regions where thermal stress concentration occurs. By providing stress absorption capacity specifically at these high-stress locations rather than uniformly across the entire structure, the patent prevents peeling at critical areas while maintaining overall structural integrity.
2Area of stationary object
If the metal film is positioned close to the protection film for compact design, then device size is reduced, but thermal stress-induced peeling and deformation increase
Solution Approach 1:
The patent resolves the spatial conflict by utilizing the vertical dimension (film stacking) rather than increasing horizontal distance. The dummy metal film is positioned between the protection film and main metal film in the vertical layering, allowing compact horizontal layout while providing stress absorption capacity through vertical stratification.
3Reliability
If the dummy metal film is made harder to resist peeling, then peeling resistance improves, but thermal stress concentration increases causing deformation
Solution Approach 1:
The patent optimizes the hardness parameter of the dummy metal film to achieve a balance between peeling resistance and stress absorption. By carefully controlling the hardness parameter within a specific range, the dummy metal film provides sufficient adhesion strength to prevent peeling while maintaining enough ductility to absorb thermal stress without causing deformation.
Data Source
AI summary
A semiconductor module includes: a semiconductor element; and a sealing member. The semiconductor element includes: a semiconductor substrate; a protection film on the semiconductor substrate; a metal film on the semiconductor substrate and having at least a part located between the semiconductor substrate and the protection film; and a dummy metal film on the semiconductor substrate between the metal film and the protection film. The surface of the semiconductor substrate has a recess. The protection film has an other recess or a hole. The dummy metal film is arranged in both the recess of the semiconductor substrate and the other recess or the hole of the protection film.