Power Semiconductor Module Interface Using Metallic Foam Eutectic Layer
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Solution Overview
Problem
Existing power semiconductor modules face challenges in achieving improved thermal conductivity between the module and a heat sink, while also requiring a firm substance-to-substance bond for effective heat dissipation.
Innovation Solution
A power semiconductor module arrangement featuring a heat-conducting layer composed of metallic foam filled with a eutectic material, which provides enhanced thermal conductivity and a stable bond between the module and heat sink, utilizing a metallic foam structure with interconnected pores filled by a eutectic material that remains solid below operational temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional heat-conducting layer is used, then the power semiconductor module can be mounted to the heat sink, but the thermal conductivity between the module and heat sink is insufficient
Solution Approach 1:
The heat-conducting layer is formed as a composite material consisting of metallic foam (aluminum or copper) filled with eutectic material. This composite structure combines the high thermal conductivity of metals with the bonding capabilities of eutectic alloys, achieving both improved thermal conductivity and firm substance-to-substance bonding between the power semiconductor module and heat sink.
Solution Approach 2:
Metallic foam with interconnected pores is used as the base structure of the heat-conducting layer. The porous structure increases the surface area for heat transfer and allows the eutectic material to penetrate and fill the cavities, creating extensive contact points for both thermal conduction and mechanical bonding.
2Loss of energy
If thermal conductivity is improved, then heat dissipation is enhanced, but the bonding strength between module and heat sink may be compromised
Solution Approach 1:
The composite of metallic foam and eutectic material provides both high thermal conductivity for efficient heat dissipation and strong bonding capability to maintain mechanical strength. The eutectic material fills the pores and creates strong adhesive bonds while the metallic foam provides the thermal conduction pathway.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly improves thermal conductivity and maintains a firm bond between the power semiconductor module and heat sink, effectively addressing thermal bottlenecks and ensuring reliable heat dissipation during operation.
Implementation Method 1
a eutectic material filling the cavities within the metallic foam
Implementation Method 2
heat-conducting layer consists of a metallic foam and an eutectic material filling the cavities within the metallic foam
Data Source
Figure 1~2
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Figure 7~10
AI summary
A power semiconductor module arrangement comprises a power semiconductor module (100), wherein the power semiconductor module (100) comprises a substrate (10), and a heat-conducting layer (40) arranged on a lower surface of the power semiconductor module (100), wherein the lower surface of the power semiconductor module (100) is a surface that is configured to be mounted to a heat sink (30), wherein the heat-conducting layer (40) consists of a metallic foam (402) and an eutectic material (404) filling the cavities within the metallic foam (402).