Semiconductor Module Grooved Sintered Bonding for Thermal Stress
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Solution Overview
Problem
Semiconductor modules face challenges in achieving high bonding strength and reliability, especially under high temperature conditions, due to thermal stress and warpage caused by conventional soldering and sintered bonding materials, which lead to poor bonding quality and reduced lifespan.
Innovation Solution
The semiconductor module incorporates a sintered bonding material with metal nanoparticles and a conductive path, such as grooves or through-holes, to discharge vaporized components, preventing thermal stress and warpage, and ensuring high bonding strength and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If soldering material is used for bonding electrodes, then bonding is achieved, but thermal stress and warpage occur due to longer thermal history under higher temperature conditions
Solution Approach 1:
The patent changes the bonding material from conventional solder to sintered bonding material containing metal nanoparticles (such as silver, copper, or aluminum particles with 1-100 nm diameter). This parameter change enables bonding at lower temperatures and shorter thermal history, thereby reducing thermal stress and warpage while maintaining bonding quality. The sintered bonding material achieves effective bonding at temperatures 50-150°C lower than conventional soldering processes.
Solution Approach 2:
The patent uses composite sintered bonding material consisting of metal nanoparticles dispersed in a solvent with surface stabilizer. This composite structure allows the metal particles to be stably dispersed during application, then sintered together upon heating to form a strong bonding layer. The composite nature enables both low-temperature processing and high bonding strength, resolving the contradiction between bonding quality and thermal stress.
2Stability of the object's composition
If sintered bonding material with metal particles coated with surface stabilizer is used, then stable dispersion in solvent is achieved, but solvent vaporization causes contamination of front surface electrode
Solution Approach 1:
The patent divides the bonding process into two separate stages: first bonding the back surface electrode, then bonding the front surface electrode. This segmentation prevents solvent vapor from the first bonding operation from contaminating the second electrode surface. The process ensures that each bonding operation is performed independently without cross-contamination, maintaining high bonding quality for both electrodes.
Solution Approach 2:
The patent applies preliminary protective measures by covering the front surface electrode with a protective film before bonding the back surface electrode. This preliminary action prevents solvent vapor from adhering to and contaminating the front surface electrode during the first bonding operation. The protective film is removed after bonding, ensuring the front surface electrode remains clean and suitable for subsequent bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a long-life wire connection with high bonding strength and reliability, suppressing pores and thermal stress, thereby enhancing the semiconductor module's performance under high temperature conditions.
Implementation Method 1
a sintered bonding material including metal nanoparticles
Implementation Method 2
the solvent vaporized upon bonding of the back surface electrode adheres to the front surface electrode
Data Source
AI summary
A semiconductor module of the present invention includes: a semiconductor element having a first main surface and a second main surface facing the first main surface, the semiconductor element including a front surface electrode and a back surface electrode on the first main surface and the second main surface, respectively; a metal plate electrically connected to the back surface electrode of the semiconductor element through a sintered bonding material including metal nanoparticles; and a plate-shaped conductor electrically connected to the front surface electrode of the semiconductor element through the sintered bonding material including the metal nanoparticles. The metal plate and the conductor include grooves communicating between a bonding region bonded to the semiconductor element and the outside of the bonding region.