2-in-1 Semiconductor Module Layout for Current-Fed Inverter Integration
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Solution Overview
Problem
Existing semiconductor switch modules for power conversion devices, such as current-fed inverters and matrix converters, face limitations in versatility and economic efficiency due to the need for separate boost converters and complex circuit configurations.
Innovation Solution
A semiconductor device with a current-fed inverter circuit configuration that integrates a 2in1 circuit for one phase of a three-phase power conversion, eliminating the need for a separate boost converter and enhancing compatibility with existing voltage-fed inverter circuits by maintaining inductance characteristics and package compatibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a separate boost converter is used in existing semiconductor switch modules, then voltage conversion functionality is achieved, but device complexity and cost increase
Solution Approach 1:
The patent merges the boost converter circuit and inverter circuit into a single integrated semiconductor device. The bridge circuit includes both the boost converter functional blocks (first and second bridge arms with switching elements and diodes) and inverter functional blocks (third and fourth bridge arms) sharing common terminals and structural elements. This integration eliminates the need for separate boost converter and inverter devices, reducing overall system complexity while maintaining voltage conversion and inversion functionalities.
Solution Approach 2:
The semiconductor device achieves multi-functionality by enabling the same bridge circuit to perform both boost conversion and inversion operations. The switching elements (first and second switching elements in each bridge arm) can operate in different modes to achieve voltage boosting or voltage inversion, allowing a single device to replace multiple specialized devices and improve adaptability across different power conversion applications.
2Adaptability or versatility
If existing semiconductor switch modules use complex circuit configurations for versatility, then multiple power conversion functions are achieved, but economic efficiency decreases
Solution Approach 1:
The patent combines multiple power conversion functions into a single semiconductor device structure. The bridge circuit integrates boost converter blocks and inverter blocks that share common terminals, switching elements, and structural components. This merging reduces the total number of discrete devices needed, simplifying manufacturing processes and reducing assembly costs while maintaining the ability to perform multiple power conversion functions.
Solution Approach 2:
The semiconductor device achieves economic efficiency through multi-functionality, where a single device structure supports both boost conversion and inversion operations. The switching elements and bridge arm configurations can be controlled to achieve different power conversion modes, eliminating the need to manufacture and assemble multiple specialized devices, thereby reducing overall production costs and improving economic efficiency.
3Device complexity
If separate boost converters are eliminated, then cost and space are reduced, but maintaining inductance characteristics and compatibility becomes challenging
Solution Approach 1:
The patent maintains inductance characteristics by integrating the boost converter functional blocks within the same bridge circuit structure as the inverter blocks. The first and second bridge arms (boost converter blocks) share common terminals and structural elements with the third and fourth bridge arms (inverter blocks), ensuring that the inductance characteristics required for current-fed inverter operation are preserved through the unified circuit topology rather than being compromised by physical separation.
Data Source
AI summary
Provided is a semiconductor device including an upper arm circuit and a lower arm circuit and having a positive electrode terminal, a negative electrode terminal, and an output terminal, which includes an insulating plate; a first wiring pattern provided on the insulating plate; and a second wiring pattern provided on the insulating plate and spaced apart from the first wiring pattern, the upper arm circuit has a circuit in which the positive electrode terminal, a first diode portion provided on the first wiring pattern, a first transistor portion connected in series with the first diode portion and provided on the first wiring pattern, and the output terminal are connected and arranged in this order, and the lower arm circuit has a second transistor portion provided on the second wiring pattern, and a second diode portion provided on the second wiring pattern.