Semiconductor Module Non-Ceramic Dielectric Isolation Layer
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Solution Overview
Problem
Conventional semiconductor modules with ceramic substrates for heat dissipation suffer from high heat transfer resistances and high costs due to the use of multiple ceramic layers, which also contribute to interference emissions during operation.
Innovation Solution
A semiconductor module design featuring a non-ceramic dielectric isolation layer between the lower metallization layers and a heat sink, allowing for efficient heat dissipation without the need for multiple ceramic layers, thereby reducing interference emissions and costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If two ceramic layers are arranged between semiconductor chips and heat sink, then electrical insulation is achieved, but heat transfer resistance increases and manufacturing cost increases
Solution Approach 1:
The patent changes the material parameter from ceramic to polymer composite material, which has both excellent electrical insulation properties and superior thermal conductivity. This parameter change allows achieving the same insulation effect with much better heat dissipation performance, resolving the contradiction between electrical insulation and heat transfer resistance.
Solution Approach 2:
The patent uses polymer composite materials that combine insulating polymers with thermally conductive fillers (such as aluminum oxide, aluminum nitride, or boron nitride particles). This composite structure achieves both electrical insulation from the polymer matrix and enhanced heat conduction from the filler particles, simultaneously satisfying both requirements.
2Reliability
If two ceramic layers are arranged between semiconductor chips and heat sink, then electrical insulation is achieved, but manufacturing cost increases
Solution Approach 1:
The patent replaces expensive ceramic materials with more economical polymer composite materials. Polymers are generally cheaper than ceramics in terms of raw material cost, processing cost, and manufacturing complexity, while still providing the required electrical insulation performance. This substitution significantly reduces manufacturing costs.
Solution Approach 2:
By changing the material class from ceramic to polymer composite, the patent accesses a more cost-effective material category that maintains functional performance while reducing material and processing costs.
3Reliability
If ceramic substrates are used for heat dissipation, then electrical insulation is provided, but interference emissions increase
Solution Approach 1:
The patent changes the material composition to polymer composites with optimized thermal and electrical parameters. These materials provide superior electrical insulation with lower dielectric losses compared to ceramics, thereby reducing electromagnetic interference emissions while maintaining insulation performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides effective heat dissipation and reduced interference emissions while minimizing material and manufacturing costs, enhancing the operational efficiency of semiconductor modules.
Implementation Method 1
a non-ceramic dielectric isolation layer (4) which is applied to the first lower metallization layer (321) and the second lower metallization layer (322)
Implementation Method 2
the underside facing away from the first lower metallization layer (321) and the second lower metallization layer (322) forms a heat dissipating contact area of the semiconductor module
Data Source
AI summary
A semiconductor module includes a first semiconductor switch, a second semiconductor switch, a circuit carrier arrangement and a non-ceramic dielectric isolation layer. The first semiconductor switch and the second semiconductor switch have a first load terminal and a second load termina. The current path of the first semiconductor switch and the current path of the second semiconductor switch are electrically connected in series between a first circuit node and a second circuit node. A circuit carrier arrangement includes a dielectric first isolation carrier section, a dielectric second isolation carrier section, a first upper metallization layer, a second upper metallization layer and a third upper metallization layer, a first lower metallization layer, and a second lower metallization layer. The non-ceramic dielectric isolation layer is applied to the first lower metallization layer and the second lower metallization layer, and its underside forms a heat dissipating contact area of the semiconductor module.


