Semiconductor Module with Raised Conductive Portions for RF Heat Dissipation
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Solution Overview
Problem
Current radio-frequency amplifier circuits face challenges in achieving high power output due to inadequate heat dissipation from semiconductor elements like heterojunction bipolar transistors (HBTs), leading to thermal runaway issues.
Innovation Solution
A semiconductor module design featuring a first and second member with conductive raised portions, a module substrate, sealing material, and a metal film, where heat transfer paths are created to efficiently dissipate heat generated by the semiconductor elements, enhancing heat release characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If a conventional module structure with wire bonding is used, then the device complexity is reduced and ease of manufacture is improved, but the heat dissipation capability deteriorates leading to inadequate heat release from semiconductor elements
Solution Approach 1:
The patent transitions from planar wire bonding to three-dimensional stacked architecture with vertical heat transfer paths. The first and second members are stacked with conductive raised portions extending vertically, creating multiple dimensional heat dissipation routes that improve thermal performance without proportionally increasing complexity
Solution Approach 2:
The module is divided into multiple functional members (first member with semiconductor element, second member) with distinct heat transfer responsibilities. Each member has conductive raised portions that create separate heat transfer paths, allowing independent optimization of heat dissipation for different components
2Power
If the semiconductor element operates at high power, then the power output is improved, but heat generation increases causing temperature rise and thermal runaway
Solution Approach 1:
The heat transfer function is segmented into multiple independent paths: one path through the conductive raised portion of the first member to the module substrate, and another path through the second member's conductive raised portion. This segmentation allows heat to be distributed and dissipated through multiple channels, preventing localized overheating and enabling higher power operation
Solution Approach 2:
The conductive raised portions act as thermal intermediaries between the semiconductor element and the heat sinks (module substrate and metal film). These raised portions provide low-thermal-resistance interfaces that efficiently transfer heat away from the semiconductor element, mediating the thermal management between power generation and dissipation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively improves heat release from semiconductor elements, suppressing temperature rises and enabling higher power output in radio-frequency amplifier circuits by diffusing heat through multiple pathways to a metal film for efficient release.
Implementation Method 1
Heat generated at the semiconductor element included in the second member is transferred along one of the heat transfer paths through the second conductive raised portion to the module substrate; and the heat is transferred along the other of the heat transfer paths through the first member and the sealing material to the metal film
Implementation Method 2
The heat transferred to the metal film diffuses over almost the entire part of the metal film covering the top and side surfaces of the sealing material, and the heat is consequently released from almost the entire part of the metal film
Implementation Method 3
the heat is consequently released from almost the entire part of the metal film
Data Source
AI summary
In a semiconductor module, a first conductive portion is raised on a lower surface of a first member to which a second member including a semiconductor element and being smaller than the first member in plan view is joined. A second conductive portion is raised at the second member in the same direction as the first conductive portion. The first and second members are mounted on a module substrate with the interposed first and second conductive portions. A sealing material is disposed on a mounting surface of the module substrate, while covering at least an area of the first member. The sealing material has a top surface facing in the same direction as the top surface of the first member and side surfaces connected to its top surface. A metal film is disposed on the top and side surfaces of the sealing material and side surfaces of the module substrate.