Semiconductor Module Series Resonance for Sub Millimeter Wave Signal Transmission
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Solution Overview
Problem
High-frequency signal transmission is challenging in semiconductor modules for wireless communication equipment operating in sub millimeter wavebands above 300 GHz due to inductance-related impedance issues from bump diameters, leading to signal reflection and radiation, which increases loss and makes it difficult to transmit high-frequency signals effectively.
Innovation Solution
The semiconductor module employs flip chip mounting with signal line and ground coupling bumps, accompanied by signal line and ground side insulating films that create series resonance circuits to cancel inductive impedance, ensuring a short circuit for RF signals and reducing transmission loss by configuring a series resonance circuit with capacitors and inductors at the interface, thereby suppressing impedance increase from inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If flip chip mounting with bumps is used to couple signal lines and grounds, then high-frequency signal transmission is enabled compared to wire bonding, but inductance from the bump diameter causes impedance increase and signal loss at sub millimeter wavebands above 300 GHz
Solution Approach 1:
The patent changes the electrical parameters of the coupling structure by introducing insulating films with specific capacitance values. The insulating film is designed to have capacitance that compensates for the inductance of the bump, creating a series resonance circuit that cancels the inductive impedance at the target frequency. This parameter change transforms the coupling structure from being inductance-dominated to being resonance-compensated, enabling low-loss signal transmission at sub millimeter wavebands.
Solution Approach 2:
The insulating film acts as an intermediary element between the signal line bump and the ground bump. It introduces capacitance that mediates the electrical interaction between signal and ground, creating a series resonance circuit that cancels the harmful inductive effects. This intermediary capacitance allows the system to overcome the inherent inductance limitation of the bump structure.
2Loss of energy
If bump diameter is reduced to decrease inductance, then signal transmission loss is reduced, but manufacturing precision and alignment difficulty increase
Solution Approach 1:
Instead of changing the physical dimension (diameter) of the bump, the patent changes the electrical parameter (capacitance) by introducing an insulating film. This allows the bump diameter to remain relatively large for easy manufacturing and alignment, while the capacitance of the insulating film compensates for the inductance, achieving low transmission loss without requiring ultra-precise alignment.
3Manufacturing precision
If larger bump diameter is used to ease manufacturing, then manufacturing precision is improved, but inductance increases causing higher signal loss
Solution Approach 1:
The patent converts the harmful inductive effect of the relatively large bump diameter into a beneficial resonance condition. By introducing the insulating film with appropriate capacitance, the inductance of the large-diameter bump becomes part of a series resonance circuit that cancels the impedance at the target frequency. Thus, the large bump diameter that would normally cause high loss is transformed into an acceptable solution through resonance compensation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for reliable high-frequency signal transmission in sub millimeter wavebands without significant loss, enhancing the transmission speed of wireless communication equipment by ensuring a short circuit for RF signals and minimizing impedance-related losses.
Implementation Method 1
a signal line side insulating film including a capacitance that causes a series resonance with an inductance by the signal line coupling bump at a target frequency and a ground side insulating film including a capacitance that causes a series resonance with an inductance by the first ground coupling bump at a target frequency
Implementation Method 2
signal line side insulating film including a capacitance that causes a series resonance with an inductance
Implementation Method 3
inductance by the signal line coupling bump
Data Source
AI summary
A semiconductor module includes a first semiconductor chip including a first signal line and a first ground, a mounting board or a second semiconductor chip including a second signal line and a second ground, a signal line coupling bump that couples the first signal line and the second signal line with each other, a first ground coupling bump that couples the first ground and the second ground with each other, a signal line side insulating film including a capacitance that causes a series resonance with an inductance by the signal line coupling bump at a target frequency and a ground side insulating film including a capacitance that causes a series resonance with an inductance by the first ground coupling bump at a target frequency.