Semiconductor Module Sandwich with Preceramic Polymer Heat Dissipation
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Solution Overview
Problem
Existing power semiconductor modules face inadequate heat dissipation due to a small cross-sectional area for heat dissipation compared to the current conduction area, limiting their performance in continuous operation.
Innovation Solution
A power semiconductor module design featuring a sandwich structure with a power semiconductor component surrounded by an electrically insulating, highly thermally conductive preceramic polymer material, which is in thermal contact with shaped metal bodies and the housing, enhancing heat dissipation through a pressure sintered connection and funnel-shaped recesses for improved thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If the load connection bodies have a smaller cross-section than the power semiconductor component's current conduction area, then the electrical connection is simplified, but the heat dissipation becomes insufficient
Solution Approach 1:
The patent applies composite materials by combining preceramic polymer with ceramic fillers (such as aluminum nitride, silicon carbide, or boron nitride) to create a material that simultaneously provides electrical insulation and high thermal conductivity. This composite structure allows the edge region to serve as an effective heat dissipation path without requiring larger load connection bodies, thus resolving the contradiction between simplified electrical connection and sufficient heat dissipation.
Solution Approach 2:
The patent utilizes the edge region (lateral dimension) of the power semiconductor component for heat dissipation, rather than relying solely on the vertical heat path through the load connection bodies. By applying the thermally conductive polymer material to the edge regions, heat can be conducted laterally to the shaped metal bodies, effectively adding another dimension to the heat dissipation pathway and compensating for the limited cross-sectional area of the load connection bodies.
2Temperature
If a preceramic polymer material with ceramic fillers is used to surround the power semiconductor component, then thermal conductivity is significantly improved, but the material selection and manufacturing process become more complex
Solution Approach 1:
The patent systematically varies the type, quantity, and size of ceramic fillers within the preceramic polymer matrix to optimize thermal conductivity. By controlling parameters such as filler concentration (30-70 wt%), filler particle size (1-50 μm), and polymer-to-filler ratio, the invention achieves tunable thermal conductivity values while maintaining manufacturability. This parameter optimization approach allows balancing thermal performance with ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Significantly improves heat dissipation from the power semiconductor component, allowing for increased performance by utilizing a preceramic polymer with high thermal conductivity and temperature resistance, achieving thermal conductivity greater than 10 W/mK.
Implementation Method 1
an electrically insulating, highly thermally conductive preceramic polymer material, which is in thermal contact with shaped metal bodies and the housing, enhancing heat dissipation through a pressure sintered connection and achieving thermal conductivity greater than 10 W/mK
Implementation Method 2
a power semiconductor module with pressure contacting, in which the components of the sandwich are also connected to one another in a non-positive manner
Data Source
Figure 1
Figure 2
AI summary
The power semiconductor module has two load connection bodies and a sandwich (40) arranged between the load connection bodies. The sandwich has two metallic mold bodies (42,46) and a power semiconductor device (44). The components of the sandwich are connected with each other by material engagement. An edge area of the power semiconductor device is enclosed by an electrically insulating and high heat-conductive polymer material (80). The polymer material is in thermally conductive contact to one of the metallic mold bodies. The polymer material is a preceramic polymer with a filler.