Double-Sided Semiconductor Module Structure Without Spacer Misalignment
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Solution Overview
Problem
Semiconductor modules with double-sided heat dissipation structures face issues such as misalignment, bonding failures, and reduced yield due to the use of spacers, which can lead to flatness problems and increased manufacturing costs.
Innovation Solution
A semiconductor module design that eliminates the need for spacers by using substrates with varying thickness patterns and conductive frames to secure space between substrates, allowing direct bonding of semiconductor devices to circuit patterns, thereby simplifying the manufacturing process and improving flatness and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spacers are used for each semiconductor device to compensate thickness deviation and form bonding spaces, then the space between substrates is secured and electrical connection is enabled, but misalignment during bonding occurs, bonding failures happen due to height deviations, and manufacturing yield is reduced
Solution Approach 1:
The patent removes the spacers from the semiconductor module structure entirely. Instead of using separate spacer components for each device, the invention integrates the spacing function directly into the substrate structure through thickness-varying patterns, thereby eliminating the source of alignment errors and bonding failures associated with discrete spacers
Solution Approach 2:
The substrate is designed with locally varying thickness patterns where different regions have different thicknesses corresponding to the specific spacing requirements of different semiconductor devices. This allows each device to have its required spacing without needing individual spacers, as the substrate itself provides the appropriate local spacing
2Productivity
If spacers are used to compensate thickness deviation between semiconductor devices and substrates, then bonding space is created, but multiple bonding processes are required (bonding semiconductor device to spacer, and spacer to substrate), reducing manufacturing productivity
Solution Approach 1:
The patent combines the spacing function and the substrate function into a single integrated structure. The thickness-varying substrate patterns perform both the structural support role of the substrate and the spacing role of spacers simultaneously, eliminating the need for separate spacer components and reducing the number of bonding steps required
3Shape
If spacers are used for each semiconductor device, then individual spacing is achieved, but flatness of the semiconductor module is compromised due to height deviations between spacers
Solution Approach 1:
The substrate incorporates locally varying thickness patterns that are precisely controlled during manufacturing. Each region of the substrate has a specific thickness designed to provide the exact spacing needed for that location, ensuring overall flatness while accommodating different device heights without requiring individual spacers with varying heights
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and efficiency of heat dissipation, reduces manufacturing costs, and prevents cracking issues associated with thermal expansion mismatches, while maintaining effective electrical connectivity and insulation properties.
Implementation Method 1
a first heat dissipation layer formed on the second surface of the first substrate... a second heat dissipation layer formed on the second surface of the second substrate
Data Source
Figure 1
Figure 2~3
Figure 4~5
AI summary
A semiconductor module according to the present disclosure includes a first substrate having a plurality of patterns having two or more different thickness; a first semiconductor device disposed on at least one or more patterns; a second substrate having a plurality of patterns having two or more different thickness, wherein one or more of the plurality of patterns of the second substrate is placed on the first semiconductor device; a first terminal pattern and a second terminal pattern, each disposed between the first substrate and the second substrate, wherein the first terminal pattern comprises a first upper terminal pattern and a first lower terminal pattern, and the second terminal pattern comprises a second upper terminal pattern and a second lower terminal pattern; and a conductive frame coupled to at least one of the first and the second terminal patterns.